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U3C-E3/9AT

P1-P3P4-P4
U3B-E3, U3C-E3, U3D-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
1
Document Number: 89066
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For us in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Units mounted on PCB with 0.47" x 0.47" (12 mm x 12 mm) copper pad areas
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V, 150 V, 200 V
I
FSM
100 A
t
rr
20 ns
V
F
at I
F
= 3.0 A 0.74 V
T
J
max. 150 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U3B U3C U3D UNIT
Device marking code U3B U3C U3D
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current
(fig. 1)
T
M
= 134 °C I
F(AV)
(1)
2.0
A
T
M
= 125 °C I
F(AV)
(2)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
U3B-E3, U3C-E3, U3D-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
2
Document Number: 89066
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 3.0 A
T
A
= 25 °C
V
F
(1)
0.85 0.90
V
T
A
= 100 °C 0.74 0.83
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-10
μA
T
A
= 100 °C 250 500
Reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
T
A
= 25 °C
t
rr
-20
ns
I
F
= 3.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
T
A
= 25 °C 25 30
T
A
= 100 °C 35 50
Storage charge
I
F
= 3.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
T
A
= 25 °C
Q
rr
915
nC
T
A
= 100 °C 22 35
Typical junction capacitance 4.0 V, 1 MHz C
J
25 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U3B U3C U3D UNIT
Typical thermal resistance
R
JA
(1)
92
°C/W
R
JM
(1)
10
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
U3D-E3/57T 0.239 57T 850 7" diameter plastic tape and reel
U3D-E3/9AT 0.239 9AT 3500 13" diameter plastic tape and reel
80
3.0
T
M
- Mount Temperature (°C)
0
1.0
90 120 150
2.0
100 110 140130
Average Forward Rectied Current (A)
0
Average Forward Current (A)
0
1.5
0.5 2.0 3.5
2.5
2.0
0.5
1.0 1.5 3.0
3.0
1.0
2.5
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
U3B-E3, U3C-E3, U3D-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
3
Document Number: 89066
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
100
Instantaneous Forward Voltage (V)
0.01
0.1
0.3 0.9 1.3
10
0.5 0.7 1.1
1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
Instantaneous Forward Current (A)
10
100
10 000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
10
1
0.1
1000
20 30 40 50 60 70 80 90 100
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
0.1
100
Reverse Voltage (V)
Junction Capactiance (pF)
10
1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.001
1
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.1
0.01 0.1 1 10 100
10
Junction to Ambient
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
P1-P3P4-P4

U3C-E3/9AT

Mfr. #:
Buy U3C-E3/9AT
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.0 Amp 150 Volt 100 Amp IFSM
Lifecycle:
New from this manufacturer.
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