MJB41CT4 Datasheet MJB42CT4G, MJB41CT4G, NJVMJB42CT4G | P1-P3

May, 2013 − Rev. 4

1 Publication Order Number:

MJB41C/D

MJB41C,

NJVMJB41CT4G (NPN),

MJB42C,

NJVMJB42CT4G (PNP)

Complementary Silicon

Plastic Power Transistors

D

2

PAK for Surface Mount

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Electrically the Same as TIP41 and T1P42 Series

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

100 Vdc

Collector−Base Voltage V

CB

100 Vdc

Emitter−Base Voltage V

EB

5.0 Vdc

Collector Current − Continuous

− Peak

I

C

6.0

10

Adc

Base Current I

B

2.0 Adc

Total Power Dissipation

@ T

C

= 25_C

Derate above 25_C

P

D

65

0.52

W

W/_C

Total Power Dissipation

@ T

A

= 25_C

Derate above 25_C

P

D

2.0

0.016

W

W/_C

Unclamped Inductive Load Energy (Note 1) E 62.5 mJ

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

1.92

_C/W

Thermal Resistance,

Junction−to−Ambient

R

q

JA

62.5

_C/W

Thermal Resistance,

Junction−to−Ambient (Note 2)

R

q

JA

50

_C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

T

L

260

_C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. I

C

= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V

CC

= 10 V, R

BE

= 100 W

2. When surface mounted to an FR−4 board using the minimum recommended

pad size.

Device Package Shipping

†

ORDERING INFORMATION

D

2

PAK

CASE 418B

STYLE 1

MARKING

DIAGRAM

J4xCG

AYWW

COMPLEMENTARY SILICON

POWER TRANSISTORS

6 AMPERES,

100 VOLTS, 65 WATTS

J4xC = Specific Device Code

x = 1 or 2

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

MJB41CT4G D

2

PAK

(Pb−Free)

800 / Tape &

Reel

http://onsemi.com

MJB42CT4G D

2

PAK

(Pb−Free)

800 / Tape &

Reel

MJB42CG D

2

PAK

(Pb−Free)

50 Units / Rail

MJB41CG D

2

PAK

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NJVMJB41CT4G D

2

PAK

(Pb−Free)

800 / Tape &

Reel

NJVMJB42CT4G D

2

PAK

(Pb−Free)

800 / Tape &

Reel

MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3) (I

C

= 30 mAdc, I

B

= 0) V

CEO(sus)

100 − Vdc

Collector Cutoff Current (V

CE

= 60 Vdc, I

B

= 0) I

CEO

− 0.7 mAdc

Collector Cutoff Current (V

CE

= 100 Vdc, V

EB

= 0) I

CES

− 100

mAdc

Emitter Cutoff Current (V

BE

= 5.0 Vdc, I

C

= 0) I

EBO

− 50

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain (I

C

= 0.3 Adc, V

CE

= 4.0 Vdc)

(I

C

= 3.0 Adc, V

CE

= 4.0 Vdc)

h

FE

30

15

−

75

−

Collector−Emitter Saturation Voltage (I

C

= 6.0 Adc, I

B

= 600 mAdc) V

CE(sat)

− 1.5 Vdc

Base−Emitter On Voltage (I

C

= 6.0 Adc, V

CE

= 4.0 Vdc) V

BE(on)

− 2.0 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (I

C

= 500 mAdc, V

CE

= 10 Vdc, f

test

= 1.0 MHz) f

T

3.0 − MHz

Small−Signal Current Gain (I

C

= 0.5 Adc, V

CE

= 10 Vdc, f = 1.0 kHz) h

fe

20 − −

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. Power Derating

T, TEMPERATURE (°C)

0 100

0

20

160

40

60

80

40 140

80

Figure 2. Switching Time Test Circuit

0.06

Figure 3. Turn−On Time

I

C

, COLLECTOR CURRENT (AMP)

0.02

0.4 6.0

0.07

1.0

4.0

T

J

= 25°C

V

CC

= 30 V

I

C

/I

B

= 10

t, TIME (s)μ

0.5

0.3

0.1

0.05

0.1 0.6 1.0

t

d

@ V

BE(off)

≈ 5.0 V

0.03

0.7

2.0

0.2 2.0

t

r

20 120

P

D

, POWER DISSIPATION (WATTS)

T

C

T

C

0

1.0

2.0

3.0

4.0

T

A

T

A

+11 V

25 ms

0

-9.0 V

R

B

-4 V

D

1

SCOPE

V

CC

+30 V

R

C

t

r

, t

f

≤ 10 ns

DUTY CYCLE = 1.0%

R

B

and R

C

VARIED TO OBTAIN DESIRED CURRENT LEVELS

D

1

MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE I

B

≈ 100 mA

MSD6100 USED BELOW I

B

≈ 100 mA

0.2

MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)

http://onsemi.com

3

t, TIME (ms)

1.0

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 1.0 100

Z

q

JC(t)

= r(t) R

q

JC

R

q

JC

= 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

- T

C

= P

(pk)

Z

q

JC(t)

P

(pk)

t

1

t

2

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t

1

/t

2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10 205.0 60 100

Figure 5. Active−Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN LTD

BONDING WIRE LTD

THERMAL LIMITATION @ T

C

= 25°C

(SINGLE PULSE)

1.0ms

2.0

1.0

10

5.0

I

C

, COLLECTOR CURRENT (AMP)

0.5ms

CURVES APPLY BELOW RATED V

CEO

3.0

0.3

40 80

5.0ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T

J(pk)

= 150_C; T

C

is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

J(pk)

v 150_C. T

J(pk)

may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.1 0.4 0.6 4.00.06 1.0 2.00.2

I

C

, COLLECTOR CURRENT (AMP)

Figure 6. Turn−Off Time

5.0

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

6.0 1.0 3.0 5.0 200.5 102.0

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

C, CAPACITANCE (pF)

200

100

70

50

30

30 50

T

J

= 25°C

V

CC

= 30 V

I

C

/I

B

= 10

I

B1

= I

B2

C

ib

C

ob

3.0

t

s

t

f

T

J

= 25°C

MJB41CT4

MJB41CT4

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