TC4426M/TC4427M/TC4428M
DS21938B-page 4 2005-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current I
IN
-10 +10 µA 0VV
IN
V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 V DC Test
Low Output Voltage V
OL
——0.025VDC Test
Output Resistance R
O
—912 I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current I
PK
—1.5AV
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
>0.5 A Duty cycle2%, t 300 µs
V
DD
= 18V
Switching Time (Note 1)
Rise Time t
R
——40nsFigure 4-1
Fall Time t
F
——40nsFigure 4-1
Delay Time t
D1
——40nsFigure 4-1
Delay Time t
D2
——60nsFigure 4-1
Power Supply
Power Supply Current I
S
8.0
0.6
mA V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (M) T
A
-55 +125 ºC
Maximum Junction Temperature T
J
+150 ºC
Storage Temperature Range T
A
-65 +150 ºC
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—150—ºC/W
2005-2013 Microchip Technology Inc. DS21938B-page 5
TC4426M/TC4427M/TC4428M
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V V
DD
18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Supply Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
t
RISE
(nsec)
4681012
14 16 18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
V
DD
(V)
100 1000 10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
t
RISE
(nsec)
TIME (nsec)
t
RISE
TEMPERATURE (˚C)
C = 1000 pF
LOAD
V = 17.5V
DD
60
–55 –35 5 25 45 65 85 105 125–15
t
FALL
50
40
30
20
10
t
FALL
(nsec)
4681012
14 16 18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
V
DD
(V)
100 1000 10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
t
FALL
(nsec)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4 6 8 1012141618
V
DD
(V)
Propagation Delay (nsec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
TC4426M/TC4427M/TC4428M
DS21938B-page 6 2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V V
DD
18V.
FIGURE 2-7: Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8: Supply Current vs. Supply
Voltage.
FIGURE 2-9: Output Resistance (R
OH
) vs.
Supply Voltage.
FIGURE 2-10: Propagation Delay Time vs.
Temperature.
FIGURE 2-11: Supply Current vs.
Temperature.
FIGURE 2-12: Output Resistance (R
OL
) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0123456789101112
Input Amplitude (V)
Propagation Delay (nsec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
DD
= 12V
4
I (mA)
QUIESCENT
186 8 10 12 14 16
0.1
BOTH INPUTS = 1
BOTH INPUTS = 0
V
DD
1
10
15
20
25
30
35
40
45
-55 -35 -15 5 25 45 65 85 105 125
Temperature (ºC)
Delay Time (nsec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
V
DD
= 18V
T
A
( C)
I
QUIESCENT
(mA)
4.0
3.5
3.0
2.5
2.0
–55 –35 –15 5 25 45 65 85 105 125
V = 18V
DD
BOTH INPUTS = 1
4681012
14 16 18
20
V
DD
25
15
10
8
5
WORST CASE @ T
J
= +150 C
TYP @ T
A
= +25 C
R
DS(ON)
(Ω)

TC4427MJA

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 1.5A Dual MOSFET Dr Non-Inverting CDIP8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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