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MAT14ARZ-R7

P1-P3P4-P6P7-P9P10-P12P13-P13
MAT14
Rev. A | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
T
A
= 25°C, unless otherwise specified.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
DC AND AC CHARACTERISTICS
Current Gain h
FE
10 µA ≤ I
C
≤ 1 mA
0 V ≤ V
CB
≤ 30 V
1
300 600
−40°C ≤ T
A
≤ +85°C 200 500
Current Gain Match Δh
FE
I
C
= 100 µA
2
1 4 %
0 V ≤ V
CB
≤ 30 V
Noise Voltage Density e
N
I
C
= 1 mA, V
CB
= 0
3
f
O
= 10 Hz 2 4 nV/√Hz
f
O
= 100 Hz 1.8 3 nV/√Hz
f
O
= 1 kHz 1.8 3 nV/√Hz
Offset Voltage V
OS
10 µA ≤ I
C
≤ 1 mA
4
0 V ≤ V
CB
≤ 30 V 100 400 µV
−40°C ≤ T
A
≤ +85°C 120 520 μV
Offset Voltage Change vs. V
CB
Change ΔV
OS
/ΔV
CB
0 V ≤ V
CB
≤ 30 V
4
10 µA ≤ I
C
≤ 1 mA 100 200 µV
Offset Voltage Change vs. I
C
Change ΔV
OS
/ΔI
C
10 µA ≤ I
C
≤ 1 mA
4
, V
CB
= 0 V 10 50 µV
Offset Voltage Drift ΔV
OS
/ΔT −40°C ≤ T
A
≤ +85°C
I
C
= 100 µA, V
CB
= 0 V 0.4 2 µV/°C
Breakdown Voltage BV
CEO
I
C
= 10 µA 40 V
−40°C ≤ T
A
≤ +85°C 40 V
Gain-Bandwidth Product f
T
I
C
= 1 mA, V
CE
= 10 V 300 MHz
Collector Leakage Current
Base I
CBO
V
CB
= 40 V 5 pA
−40°C ≤T
A
≤ +85°C 0.5 nA
Substrate I
CS
V
CS
= 40 V 0.5 nA
−40°C ≤ T
A
≤ +85°C 0.7 nA
Emitter I
CES
V
CE
= 40 V 3 nA
−40°C ≤ T
A
≤ +85°C 5 nA
Input Current
Bias I
B
I
C
= 100 µA, 0 V ≤ V
CB
≤ 30 V 165 330 nA
−40°C ≤ T
A
≤ +85°C 200 500 nA
Offset I
OS
I
C
= 100 µA, V
CB
= 0 V 2 13 nA
−40°C ≤ T
A
≤ +85°C 8 40 nA
Offset Drift ΔI
OS
/ΔT I
C
= 100 µA
−40°C ≤ T
A
≤ +85°C 100 pA/°C
Collector Saturation Voltage V
CE(SAT)
I
C
= 1 mA, I
B
= 100 µA 0.03 0.06 V
Output Capacitance C
OBO
V
CB
= 15 V, I
E
5
= 0, f = 1 MHz 10 pF
Bulk Resistance r
BE
10 µA ≤ I
C
≤ 10 mA,V
CB
= 0 V
6
0.4 0.6 Ω
Input Capacitance C
EBO
V
CB
= 15 V, I
E
= 0, f = 1 MHz 40 pF
1
Current gain measured at I
C
= 10 µA, 100 µA, and 1 mA.
2
Current gain match (Δh
FE
) defined as: Δh
FE
= (100(ΔI
B
)(h
FE min
)/I
C
).
3
Sample tested.
4
Measured at I
C
= 10 µA and guaranteed by design over the specified range of I
C
.
5
See Table 2 for the emitter current rating.
6
Guaranteed by design.
MAT14
Rev. A | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Voltage
Collector-to-Base Voltage (BV
CBO
) 40 V
Collector-to-Emitter Voltage (BV
CEO
) 40 V
Collector-to-Collector Voltage (BV
CC
) 40 V
Emitter-to-Emitter Voltage (BV
EE
) 40 V
Current
Collector Current (I
C
) 30 mA
Emitter Current (I
E
) 30 mA
Temperature
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
14-Lead SOIC 115 36 °C/W
ESD CAUTION
MAT14
Rev. A | Page 5 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
300
400
500
600
700
380
480
580
680
360
460
560
660
340
440
540
640
320
420
520
620
0.001 0.01 0.1 1
CURRENT GAIN (β)
COLLECTOR CURRENT (mA)
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
09045-002
Figure 2. Current Gain vs. Collector Current
–50 –25 0 25 50 75 100
125
150
CURRENT GAIN (β)
TEMPERATURE (°C)
300
400
500
600
700
380
480
580
680
360
460
560
660
340
440
540
640
320
420
520
620
V
CB
= 0V
V
CB
= 20V
09045-003
Figure 3. Current Gain vs. Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12
VOLTAGE NOISE DENSITY (nV/srtHz)
COLLECTOR CURRENT (I
C
)
NOISE = 100Hz
NOISE = 10Hz
09045-004
Figure 4. Voltage Noise Density vs. Collector Current
Figure 5. Base Emitter-On-Voltage vs. Collector Current
0.001
0.01
0.1
1
10
100
INPUT RESISTANCE (MΩ)
0.001 0.01 0.1 1 10
COLLECTOR CURRENT (mA)
09045-006
Figure 6. Small Signal Input Resistance vs. Collector Current
0.01µ
0.1µ
1µ
0.01m
0.1m
1m
1µ 0.01m 0.1m 1m 0.01 0.1 1
CONDUCTANCE ( )
COLLECTOR CURRENT (A)
09045-007
Figure 7. Small Signal Output Conductance vs. Collector Current
P1-P3P4-P6P7-P9P10-P12P13-P13

MAT14ARZ-R7

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Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT Matched Mono Quad
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