MMBT3906-G

MMBT3906-G (PNP)

RoHS Device

QW-BTR02

Page 1

REV:B

Symbol

Parameter

Conditions

Min

Max

Unit

O

Typ

VCEO

Emitter-Base voltage

Collector-Emitter voltage

Collector-Base voltage

Collector current-Continuous

Symbol

Parameter

Min

Max

Unit

V

V

V

-5

-40

-40

IC -0.2

A

0.2

W

PC

Collector dissipatioin

+150

O

C

TSTG , TJ

Storage temperature and junction temperature

-55

Collector-Base breakdown voltage

-0.1

IC =-100μA , IE=0

Features

-Epitaxial planar die construction

-As complementary type, the NPN

transistor MMBT3904-G is recommended

Dimensions in inches and (millimeter)

SOT-23

0.071 (1.80)

1 2

3

0.119 (3.00)

0.110 (2.80)

0.100 (2.55)

0.089 (2.25)

0.020 (0.50)

0.012 (0.30)

0.056 (1.40)

0.047 (1.20)

0.041 (1.05)

0.035 (0.90)

0.079 (2.00)

0.004 (0.10) max

0.006 (0.15)

0.003 (0.08)

1

Base

2

Emitter

Collector

3

VCBO

VEBO

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Base-Emitter saturation voltage

Collector-Emitter saturation voltage

Transition frequency

Delay time

Storage time

Rise time

Fall time

IC =-1mA , IB=0

IE =-100μA , IC=0

VCB=-40V , IE=0

VCE=-40V , IB=0

VEB=-5V , IC=0

VCE=-1V , IC=-10mA

VCE=-1V , IC=-50mA

IC=-50mA , IB=-5mA

IC=-50mA , IB=-5mA

VCE=-20V , IC=-10mA

f=100MHZ

VCC=-3.0V , VBE=-0.5V

IC=-10mA , IB1=-1.0mA

VCC=-3.0Vdc , IC=-10mA

IB1=IB2=-1.0mA

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

fT

td

tr

ts

tf

-40

-40

-5

-0.1

-0.1

300

100

60

-0.4

-0.95

300

35

35

225

75

V

V

V

µA

µA

µA

V

V

Mhz

nS

nS

nS

nS

VCE=-1V , IC=-100mA

hFE(3)

30

0.020 (0.50)

0.012 (0.30)

General Purpose Transistor

Maximum Ratings (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

RATING AND CHARACTERISTIC CURVES (MMBT3906-G)

Page 2

QW-BTR02

REV:B

Fig.5 - IC — VBE

Base - Emmiter Voltage , VBE (V)

Ta=100°C

Collector Current , Ic (mA)

DC Current Gain, hFE

-0.1 -1 -10

-100

0

100

200

300

-200

Collector Current , Ic (mA)

1

-10

-100

-30

100

-10

Fig.3 - VCEsat — IC

500

100

Fig.4 - VBEsat — IC

Collector Current, Ic (mA)

1 10

-0.4

200

-0.8

-1.2

-0.0

Fig.1 - Static Characteristic

COLLECTOR CURRENT, I

C

(mA)

Collector-Emitter Voltage, VCE (V)

-500uA

-450uA

I

B

=-50uA

COMMON

EMITTER

Ta=25

℃

-0

-20

-40

-60

-80

-90

-0 -4 -8 -12 -16 -18

-100uA

-150uA

-200uA

-250uA

-300uA

-350uA

-400uA

-450uA

-500uA

Ta=25°C

COMMON EMITTER

VCE=-1V

Fig.2 - hFE— IC

300

-30

ß=10

-20

Reverse Voltage , V (V)

-0.1

-1

-10

1

Ca

p

a

c

i

ta

n

c

e

,

c

(p

F)

Fig.6 - Cob/Cib — VCB/VEB

9

-3

F=1MHz

Ta=25°C

IE=0 / Ic=0

Cob

Cib

-0.0 -0.2 -0.6

-100

-0.4 -0.8

-0.3

-0.1

-1

-3

-10

-30

-100

Ta=100°C

Ta=25°C

C

o

ll

e

ct

o

r

C

u

rr

e

n

t

,

I

c

(m

A)

Co

l

l

e

c

t

o

r

-E

m

t

t

e

r

S

a

t

u

r

a

t

i

o

n

Vo

lta

g

e

,

(

m

V

)

V

C

Es

a

t

B

A

SE-

E

m

i

t

t

e

r

S

a

tu

r

a

t

i

o

n Vo

l

t

a

g

e

,

,

(V

)

V

B

E

s

a

t

General Purpose Transistor

Page 3

QW-BTR02

REV:B

Fig.7 - fT — IC

Transition Frequency , fT (MHZ)

Collector current, Ic (mA)

-1 -10

-50

200

600

Fig.8 - PC — Ta

Ambient Temperature , Ta (°C)

Collector Power Dissipation, Pc (mW)

0 25 50 75 100 125 150

0

50

100

150

200

250

300

400

-3

VCE=-20V

Ta=25°C

-30

RATING AND CHARACTERISTIC CURVES (MMBT3906-G)

General Purpose Transistor

MMBT3906-G

Mfr. #:

Manufacturer:

Comchip Technology

Description:

Bipolar Transistors - BJT VCEO=40V IC=100mA

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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Products related to this Datasheet

MMBT3906-G