2SC5086
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S
21e
|
2
= 11dB (f = 1 GHz)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-base voltage V
EBO
3 V
Base current I
B
40 mA
Collector current I
C
80 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency f
T
V
CE
= 10 V, I
C
= 20 mA 5 7 ⎯ GHz
⎪S
21e
⎪
2
(1)
V
CE
= 10 V, I
C
= 20 mA, f = 500 MHz ⎯ 16.5 ⎯
Insertion gain
⎪S
21e
⎪
2
(2)
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz 7.5 11 ⎯
dB
NF (1) V
CE
= 10 V, I
C
= 5 mA, f = 500 MHz ⎯ 1 ⎯
Noise figure
NF (2)
V
CE
= 10 V, I
C
= 5 mA, f = 1 GHz ⎯ 1.1 2
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 10 V, I
E
= 0 ⎯ ⎯ 1 μA
Emitter cut-off current I
EBO
V
EB
= 1 V, I
C
= 0 ⎯ ⎯ 1 μA
DC current gain
h
FE
(Note 1)
V
CE
= 10 V, I
C
= 20 mA 80 ⎯ 240
Output capacitance C
ob
⎯ 1.0 ⎯ pF
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz (Note 2)
⎯ 0.65 1.15 pF
Note 1: h
FE
classification O: 80 to 160, Y: 120 to 240
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ.)
Start of commercial production
1993-10
