BB202LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Preliminary data sheet Rev. 2 — 7 September 2011 2 of 8
NXP Semiconductors
BB202LX
Low-voltage variable capacitance diode
3. Ordering information
4. Marking
5. Limiting values
6. Characteristics
[1] r
s
is the value at which C
d
=30pF.
Table 2. Ordering information
Type number Package
Name Description Version
BB202LX - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.4 mm
SOD882T
Table 3. Marking
Type number Marking code
BB202LX L1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 6 V
I
F
forward current - 10 mA
T
stg
storage temperature 55 +85 C
T
j
junction temperature 55 +85 C
Table 5. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current see Figure 3
V
R
=6V - - 10 nA
V
R
=6V; T
j
=85C--100nA
r
s
diode series resistance f = 100 MHz; see Figure 2
[1]
-0.35-
C
d
diode capacitance see Figure 1 and Figure 4; f = 1 MHz;
V
R
= 0.2 V 28.2 - 33.5 pF
V
R
= 2.3 V 7.2 - 11.2 pF
diode capacitance ratio f = 1 MHz 2.5 - -
C
d0V2
C
d2V3
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