BB202LX,315

1. Product profile
1.1 General description
The BB202LX is a planar technology variable capacitance diode in a SOD882T ultra small
leadless plastic SMD package.
1.2 Features and benefits
Very steep Capacitance-Voltage (CV) curve
C
d(0V2)
: 30.5 pF; C
d(2V3)
: 9.5 pF
Ratio C
d(0V2)
to C
d(2V3)
minimal 2.5
Ultra small leadless SMD package
Low series resistance
1.3 Applications
Voltage Controlled Oscillators (VCO)
Electronic tuning in FM radios
Recommended as the reference VCO varactor for Philips Tuner ICs
TEA5764, TEA5767 and TEA5768 in mobile and portable platforms
2. Pinning information
[1] The marking bar indicates the cathode.
BB202LX
Low-voltage variable capacitance diode
Rev. 2 — 7 September 2011 Preliminary data sheet
Table 1. Discrete pinning
Pin Description Simplified outline Symbol
1 cathode
[1]
2 anode
Transparent
top view
21
sym008
BB202LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Preliminary data sheet Rev. 2 — 7 September 2011 2 of 8
NXP Semiconductors
BB202LX
Low-voltage variable capacitance diode
3. Ordering information
4. Marking
5. Limiting values
6. Characteristics
[1] r
s
is the value at which C
d
=30pF.
Table 2. Ordering information
Type number Package
Name Description Version
BB202LX - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.4 mm
SOD882T
Table 3. Marking
Type number Marking code
BB202LX L1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 6 V
I
F
forward current - 10 mA
T
stg
storage temperature 55 +85 C
T
j
junction temperature 55 +85 C
Table 5. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current see Figure 3
V
R
=6V - - 10 nA
V
R
=6V; T
j
=85C--100nA
r
s
diode series resistance f = 100 MHz; see Figure 2
[1]
-0.35-
C
d
diode capacitance see Figure 1 and Figure 4; f = 1 MHz;
V
R
= 0.2 V 28.2 - 33.5 pF
V
R
= 2.3 V 7.2 - 11.2 pF
diode capacitance ratio f = 1 MHz 2.5 - -
C
d0V2
C
d2V3
------------------
BB202LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Preliminary data sheet Rev. 2 — 7 September 2011 3 of 8
NXP Semiconductors
BB202LX
Low-voltage variable capacitance diode
f=1MHz; T
j
=25C. f = 470 MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Diode serial resistance as a function of reverse
voltage; typical values
V
R
(V)
10
1
101
001aae545
20
10
30
40
C
d
(pF)
0
001aae546
0.4
0.2
0.6
0.8
r
s
(Ω)
0
V
R
(V)
10
1
10
2
101
T
j
=0C to 85 C.
Fig 3. Reverse current as a function of junction
temperature; maximum values
Fig 4. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values
001aae541
10
2
10
10
3
I
R
(nA)
1
T
j
(°C)
0 1008040 6020
V
R
(V)
10
1
10
2
101
001aae542
10
3
10
4
10
2
TC
Cd
(K
1
)
10
5

BB202LX,315

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Varactor Diodes TUNER DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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