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MJE15035G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1 Publication Order Number:
MJE15034/D
MJE15034 (NPN),
MJE15035 (PNP)
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
Complementary silicon plastic power transistors are designed for
use as high−frequency drivers in audio amplifiers.
Features
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• Epoxy meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
350 Vdc
Collector−Base Voltage V
CB
350 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
50
0.40
W
W/_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
2.0
0.016
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
350 VOLTS, 50 WATTS
Device Package Shipping
ORDERING INFORMATION
TO−220
CASE 221A
STYLE 1
1
2
3
4
MARKING
DIAGRAM
MJE1503x = Device Code
x = 4 or 5
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
MJE1503xG
AYWW
www.onsemi.com
MJE15035G TO−220
(Pb−Free)
50 Units / Rail
MJE15034G TO−220
(Pb−Free)
50 Units / Rail
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJE15034 (NPN), MJE15035 (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) (I
C
= 10 mAdc, I
B
= 0) V
CEO(sus)
350 − Vdc
Collector Cutoff Current (V
CB
= 350 Vdc, I
E
= 0) I
CBO
− 10
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
− 10
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 0.1 Adc, V
CE
= 5.0 Vdc)
(I
C
= 0.5 Adc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 5.0 Vdc)
h
FE
100
100
50
10
−
−
−
−
−
Collector−Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 0.1 Adc) V
CE(sat)
− 0.5 Vdc
Base−Emitter On Voltage (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc) V
BE(on)
− 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
30 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
T
= ⎪h
fe
⎪• f
test
.
0
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
0.1
1.0
10
1.0 10 100 100
0
0.01
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (AMPS)
DC
Figure 2. Active Region Safe Operating Area
100mS
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 3. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
MJE15034 (NPN), MJE15035 (PNP)
www.onsemi.com
3
0.1
1.0
10
0.01 0.1 1.0
10
0.01
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T
J
= 150°C
25°C
−40°C
0.1
1.0
10
0.01 0.1 1.0 10
0.01
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T
J
= 150°C
25°C
−40°C
10
100
1000
0.01 0.1 1.0 10
1.0
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 150°C
25°C
−40°C
10
100
1000
0.01 0.1 1.0 10
1.0
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 150°C
25°C
−40°C
10
100
1000
0.01 0.1 1.0 10
1.0
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 150°C
25°C
−40°C
10
100
1000
0.01 0.1 1.0 10
1.0
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
Figure 4. DC Current Gain, V
CE
= 5.0 V
NPN MJE15034
Figure 5. DC Current Gain, V
CE
= 5.0 V
PNP MJE15035
T
J
= 150°C
25°C
−40°C
Figure 6. DC Current Gain, V
CE
= 20 V
NPN MJE15034
Figure 7. DC Current Gain, V
CE
= 20 V
PNP MJE15035
Figure 8. V
CE(sat)
NPN MJE15034
Figure 9. V
CE(sat)
PNP MJE15035
I
C
/I
B
= 10
I
C
/I
B
= 10
P1-P3P4-P5

MJE15035G

Mfr. #:
Buy MJE15035G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 4A 350V 50W PNP
Lifecycle:
New from this manufacturer.
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