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BUK7660-100A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7660-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 February 2011 3 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
03nd04
10
−1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
t
p
t
p
T
P
t
T
δ =
BUK7660-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 February 2011 4 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction
to mounting base
see Figure 4 --1.4K/W
R
th(j-a)
thermal resistance from junction
to ambient
mounted on printed-circuit board ;
minimum footprint
-50-K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nd05
Single Shot
0.2
0.1
0.05
0.02
10
−2
10
−1
1
10
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
t
p
t
p
T
P
t
T
δ =
BUK7660-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 7 February 2011 5 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
= 0.25 mA; V
GS
=0V; T
j
=-55°C89--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 11
234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 11
--4.4V
I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 11
1--V
I
DSS
drain leakage current V
DS
= 100 V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
= 100 V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
=175°C;
see Figure 12; see Figure 13
- - 150 mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 12
; see Figure 13
- 5160mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 1030 1377 pF
C
oss
output capacitance - 143 171 pF
C
rss
reverse transfer capacitance - 90 120 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-10-ns
t
r
rise time - 45 - ns
t
d(off)
turn-off delay time - 31 - ns
t
f
fall time - 20 - ns
L
D
internal drain inductance from upper edge of drain mounting
base to centre of die ; T
j
=25°C
-2.5-nH
from drain lead 6 mm from package to
centre of die ; T
j
=25°C
-4.5-nH
L
S
internal source inductance from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-59-ns
Q
r
recovered charge - 180 - nC
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7660-100A,118

Mfr. #:
Buy BUK7660-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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