MC74HCT241A
http://onsemi.com
3
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ± 20 mA
I
out
DC Output Current, per Pin ± 35 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 75 mA
P
D
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature – 65 to + 150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 4.5 5.5 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
_C
t
r
, t
f
Input Rise and Fall Time (Figure 1) 0 500 ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter Test Conditions
V
CC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C v 125_C
V
IH
Minimum High−Level Input
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| v 20 μA
4.5
5.5
2
2
2
2
2
2
V
V
IL
Maximum Low−Level Input
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| v 20 μA
4.5
5.5
0.8
0.8
0.8
0.8
0 8
0.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
| v 20 μA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
in
= V
IH
or V
IL
|I
out
| v 6 mA 4.5 3.98 3.84 3.7
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
| v 20 μA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
| v 6 mA 4.5 0.26 0.33 0.4
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 5.5 ± 0.1 ± 1.0 ± 1.0 μA
I
OZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
5.5 ± 0.5 ± 5.0 ± 10 μA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 μA
5.5 4 40 160 μA
ΔI
CC
Additional Quiescent Supply
Current
V
in
= 2.4 V, Any One Input
V
in
= V
CC
or GND, Other Inputs
l
out
= 0 μA
5.5
≥ −55_C 25_C to 125_C
mA
2.9 2.4
1. Total Supply Current = I
CC
+ ΣΔI
CC
.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
