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STW56N60DM2

P1-P3P4-P6P7-P9P10-P12
STW56N60DM2
DocID026982 Rev 3
7/12
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits
STW56N60DM2
8/12
DocID026982 Rev 3
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STW56N60DM2
DocID026982 Rev 3
9/12
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 TO-247 package information
Figure 20: TO-247 package outline
0075325_H
P1-P3P4-P6P7-P9P10-P12

STW56N60DM2

Mfr. #:
Buy STW56N60DM2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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