LTC1438/LTC1439
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APPLICATIONS INFORMATION
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Accepting larger values of I
L
allows the use of low
inductances, but results in higher output voltage ripple
and greater core losses. A reasonable starting point for
setting ripple current is I
L
= 0.4(I
MAX
). Remember, the
maximum I
L
occurs at the maximum input voltage.
The inductor value also has an effect on low current
operation. The transition to low current operation begins
when the inductor current reaches zero while the bottom
MOSFET is on. Lower inductor values (higher I
L
) will
cause this to occur at higher load currents, which can
cause a dip in efficiency in the upper range of low current
operation. In Burst Mode operation (TGS1, 2 pins open),
lower inductance values will cause the burst frequency to
decrease.
The Figure 3 graph gives a range of recommended induc-
tor values vs operating frequency and V
OUT
.
Ferrite designs have very low core loss and are preferred
at high switching frequencies, so design goals can con-
centrate on copper loss and preventing saturation. Ferrite
core material saturates “hard,” which means that induc-
tance collapses abruptly when the peak design current is
exceeded. This results in an abrupt increase in inductor
ripple current and consequent output voltage ripple. Do
not allow the core to saturate!
Molypermalloy (from Magnetics, Inc.) is a very good, low
loss core material for toroids, but it is more expensive than
ferrite. A reasonable compromise from the same manu-
facturer is Kool Mµ. Toroids are very space efficient,
especially when you can use several layers of wire. Be-
cause they generally lack a bobbin, mounting is more
difficult. However, designs for surface mount are available
which do not increase the height significantly.
Power MOSFET and D1 Selection
Three external power MOSFETs must be selected for each
controller with the LTC1439: a pair of N-channel MOSFETs
for the top (main) switch and an N-channel MOSFET for
the bottom (synchronous) switch. Only one top MOSFET
is required for each LTC1438 controller.
To take advantage of the Adaptive Power output stage, two
topside MOSFETs must be selected. A large [low R
SD(ON)
]
MOSFET and a small [higher R
DS(ON)
] MOSFET are re-
quired. The large MOSFET is used as the main switch and
works in conjunction with the synchronous switch. The
smaller MOSFET is only enabled under low load current
conditions. The benefit of this is to boost low to midcurrent
efficiencies while continuing to operate at constant fre-
quency. Also, by using the small MOSFET the circuit will
keep switching at a constant frequency down to lower
currents and delay skipping cycles.
The R
DS(ON)
recommended for the small MOSFET is
around 0.5. Be careful not to use a MOSFET with an
R
DS(ON)
that is too low; remember, we want to conserve
gate charge. (A higher R
DS(ON)
MOSFET has a smaller gate
capacitance and thus requires less current to charge its
gate). For all LTC1438 and cost sensitive LTC1439 appli-
cations, the small MOSFET is not required. The circuit then
begins Burst Mode operation as the load current drops.
Inductor Core Selection
Once the value for L is known, the type of inductor must be
selected. High efficiency converters generally cannot af-
ford the core loss found in low cost powdered iron cores,
forcing the use of more expensive ferrite, molypermalloy
or Kool Mµ
®
cores. Actual core loss is independent of core
size for a fixed inductor value, but it is very dependent on
inductance selected. As inductance increases, core losses
go down. Unfortunately, increased inductance requires more
turns of wire and therefore copper losses will increase.
Kool Mµ is a registered trademark of Magnetics, Inc.
OPERATING FREQUENCY (kHz)
0
0
INDUCTOR VALUE (µH)
10
20
30
40
60
50
100 150 200
1438 F03
250 300
50
V
OUT
= 5.0V
V
OUT
= 3.3V
V
OUT
= 2.5V
Figure 3. Recommended Inductor Values
LTC1438/LTC1439
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The peak-to-peak drive levels are set by the INTV
CC
volt-
age. This voltage is typically 5V during start-up (see
EXTV
CC
Pin Connection). Consequently, logic level thresh-
old MOSFETs must be used in most LTC1438/LTC1439
applications. The only exception is applications in which
EXTV
CC
is powered from an external supply greater than
8V (must be less than 10V), in which standard threshold
MOSFETs (V
GS(TH)
< 4V) may be used. Pay close attention
to the BV
DSS
specification for the MOSFETs as well; many
of the logic level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the "ON"
resistance R
SD(ON)
, reverse transfer capacitance C
RSS
,
input voltage and maximum output current. When the
LTC1438/LTC1439 are operating in continuous mode the
duty cycles for the top and bottom MOSFETs are given by:
Main Switch Duty Cycle
Synchronous Switch Duty Cycle
=
=
()
V
V
VV
V
OUT
IN
IN OUT
IN
The MOSFET power dissipations at maximum output
current are given by:
P
V
V
IR
kV C f
P
VV
V
IR
MAIN
OUT
IN
MAX DS ON
IN RSS
SYNC
IN OUT
IN
MAX DS ON
=
()
+
()
+
() ( )( )()
=
()
+
()
2
2
1
1
δ
δ
()
()
I
1.85
MAX
where δ is the temperature dependency of R
DS(ON)
and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the topside
N-channel equation includes an additional term for transi-
tion losses, which are highest at high input voltages. For
V
IN
< 20V the high current efficiency generally improves
with larger MOSFETs, while for V
IN
> 20V the transition
losses rapidly increase to the point that the use of a higher
R
DS(ON)
device with lower C
RSS
actual provides higher
efficiency. The synchronous MOSFET losses are greatest
at high input voltage or during a short circuit when the duty
cycle in this switch is nearly 100%. Refer to the Foldback
Current Limiting section for further applications information.
The term (1 + δ) is generally given for a MOSFET in the form
of a normalized R
DS(ON)
vs Temperature curve, but
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs. C
RSS
is usually specified in the MOSFET
characteristics. The constant k = 2.5 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 serves two
purposes. During continuous synchronous operation, D1
conducts during the dead-time between the conduction of
the two large power MOSFETs. This prevents the body
diode of the bottom MOSFET from turning on and storing
charge during the dead-time, which could cost as much as
1% in efficiency. During low current operation, D1 oper-
ates in conjunction with the small top MOSFET to provide
an efficient low current output stage. A 1A Schottky is
generally a good compromise for both regions of opera-
tion due to the relatively small average current.
C
IN
and C
OUT
Selection
In continuous mode, the source current of the top
N-channel MOSFET is a square wave of duty cycle V
OUT
/
V
IN
. To prevent large voltage transients, a low ESR input
capacitor sized for the maximum RMS current must be
used. The maximum RMS capacitor current is given by:
C Required I
IN RMS
()
[]
I
VVV
V
MAX
OUT IN OUT
IN
/12
This formula has a maximum at V
IN
= 2V
OUT
, where I
RMS
= I
OUT
/2. This simple worst-case condition is commonly
used for design because even significant deviations do not
offer much relief. Note that capacitor manufacturer’s ripple
current ratings are often based on only 2000 hours of life.
This makes it advisable to further derate the capacitor or to
choose a capacitor rated at a higher temperature than
required. Several capacitors may also be paralleled to meet
size or height requirements in the design. Always consult
the manufacturer if there is any question.
LTC1438/LTC1439
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The selection of C
OUT
is driven by the required effective
series resistance (ESR). Typically, once the ESR require-
ment is satisified the capacitance is adequate for filtering.
The output ripple (V
OUT
) is approximated by:
∆∆V I ESR
fC
OUT L
OUT
+
1
4
where f = operating frequency, C
OUT
= output capacitance
and I
L
= ripple current in the inductor. The output ripple
is highest at maximum input voltage since I
L
increases
with input voltage. With I
L
= 0.4I
OUT(MAX)
the output
ripple will be less than 100mV at max V
IN
assuming:
C
OUT
Required ESR < 2R
SENSE
Manufacturers such as Nichicon, United Chemicon and
Sanyo should be considered for high performance through-
hole capacitors. The OS-CON semiconductor dielectric
capacitor available from Sanyo has the lowest (ESR size)
product of any aluminum electrolytic at a somewhat
higher price. Once the ESR requirement for C
OUT
has been
met, the RMS current rating generally far exceeds the
I
RIPPLE(P-P)
requirement.
In surface mount applications multiple capacitors may
have to be paralleled to meet the ESR or RMS current
handling requirements of the application. Aluminum elec-
trolytic and dry tantalum capacitors are both available in
surface mount configurations. In the case of tantalum, it is
critical that the capacitors are surge tested for use in
switching power supplies. An excellent choice is the AVX
TPS series of surface mount tantalums, available in case
heights ranging from 2mm to 4mm. Other capacitor types
include Sanyo OS-CON, Nichicon PL series and Sprague
593D and 595D series. Consult the manufacturer for other
specific recommendations.
INTV
CC
Regulator
An internal P-channel low dropout regulator produces 5V
at the INTV
CC
pin from the V
IN
supply pin. INTV
CC
powers
the drivers and internal circuitry within the LTC1438/
LTC1439. The INTV
CC
pin regulator can supply 40mA and
must be bypassed to ground with a minimum of 2.2µF
tantalum or low ESR electrolytic capacitor. Good bypass-
ing is necessary to supply the high transient currents
required by the MOSFET gate drivers.
High input voltage applications in which large MOSFETs
are being driven at high frequencies may cause the maxi-
mum junction temperature rating for the LTC1438/LTC1439
to be exceeded. The IC supply current is dominated by the
gate charge supply current when not using an output
derived EXTV
CC
source. The gate charge is dependent on
operating frequency as discussed in the Efficiency Consid-
erations section. The junction temperature can be esti-
mated by using the equations given in Note 2 of the
Electrical Characteristics. For example, the LTC1439 is
limited to less than 21mA from a 30V supply:
T
J
= 70°C + (21mA)(30V)(85°C/W) = 124°C
To prevent maximum junction temperature from being
exceeded, the input supply current must be checked while
operating in continuous mode at maximum V
IN
.
EXTV
CC
Connection
The LTC1438/LTC1439 contain an internal P-channel
MOSFET switch connected between the EXTV
CC
and
INTV
CC
pins. When the voltage applied to EXTV
CC
rises
above
4.8V, the internal regulator is turned off and an
internal switch closes, connecting the EXTV
CC
pin to the
INTV
CC
pin thereby supplying internal power to the IC. The
switch remains closed as long as the voltage applied to
EXTV
CC
remains above 4.5V. This allows the MOSFET
driver and control power to be derived from the output
during normal operation (4.8V < V
OUT
< 9V) and from the
internal regulator when the output is out of regulation
(start-up, short circuit). Do not apply greater than 10V to
the EXTV
CC
pin and ensure that EXTV
CC
V
IN
.
Significant efficiency gains can be realized by powering
INTV
CC
from the output, since the V
IN
current resulting
from the driver and control currents will be scaled by a
factor of Duty Cycle/Efficiency. For 5V regulators this
supply means connecting the EXTV
CC
pin directly to V
OUT
.
However, for 3.3V and other lower voltage regulators,
additional circuitry is required to derive INTV
CC
power
from the output.
The following list summarizes the four possible connec-
tions for EXTV
CC:
1. EXTV
CC
left open (or grounded). This will cause INTV
CC
to be powered from the internal 5V regulator resulting

LTC1439CG

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators LTC1439 - Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
Lifecycle:
New from this manufacturer.
Delivery:
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