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SMF24CT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
1 Publication Order Number:
SMF05C/D
SMF05C, SMF12C, SMF15C,
SMF24C
5−Line Transient Voltage
Suppressor Array
This 5−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as computers, printers, automotive electronics,
networking communication and other applications. This device
features a monolithic common anode design which protects five
independent lines in a single SC−88 package.
Features
• Protects up to 5−Line in a Single SC−88 Package
• Peak Power Dissipation − 100 W (8 x 20 ms Waveform)
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
• Flammability Rating of UL 94 V−0
• Pb−Free Packages are Available
Applications
• Hand−Held Portable Applications
• Networking and Telecom
• Automotive Electronics
• Serial and Parallel Ports
• Notebooks, Desktops, Servers
MAXIMUM RATINGS (T
J
=25°C unless otherwise specified)
Symbol Rating Value Unit
P
PK
1 Peak Power Dissipation
8 x 20 ms Double Exponential Waveform
(Note 1)
100 W
T
J
Operating Junction Temperature Range −40 to 125 °C
T
STG
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)
16000
400
15000
15000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 3.
SC−88 FIVE TRANSIENT
VOLTAGE SUPPRESSOR
100 W PEAK POWER
SC−88
CASE 419B
STYLE 24
1
2
3
6
5
4
MARKING DIAGRAM
PIN ASSIGNMENT
PIN1. CATHODE
2. ANODE
3 CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
http://onsemi.com
XX = Specific Device Code
6J = SMF05C
6K = SMF12C
6L = SMF15C
6M= SMF24C
M = Date Code
G = Pb−Free Package
XX
M
G
G
1
6
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
SMF05C, SMF12C, SMF15C, SMF24C
http://onsemi.com
2
SMF05C ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
(Note 2) 5.0 V
Breakdown Voltage V
BR
I
T
= 1 mA, (Note 3) 6.2 7.2 V
Reverse Leakage Current I
R
V
RWM
= 5 V 0.07 5.0
mA
Clamping Voltage V
C
I
PP
= 5 A (8 x 20 ms Waveform)
9.8 V
Clamping Voltage V
C
I
PP
= 8 A (8 x 20 ms Waveform)
12.5 V
Maximum Peak Pulse Current I
PP
8 x 20 ms Waveform
8.0 A
Capacitance C
J
V
R
= 0 V, f = 1 MHz (Line to GND) 80 130 pF
SMF12C ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
(Note 2) 12 V
Breakdown Voltage V
BR
I
T
= 1 mA, (Note 3) 13.3 15 V
Reverse Leakage Current I
R
V
RWM
= 12 V 0.01 0.1
mA
Clamping Voltage V
C
I
PP
= 3 A (8 x 20 ms Waveform)
21 V
Clamping Voltage V
C
I
PP
= 6 A (8 x 20 ms Waveform)
23 V
Maximum Peak Pulse Current I
PP
8 x 20 ms Waveform
6.0 A
Capacitance C
J
V
R
= 0 V, f = 1 MHz (Line to GND) 40 60 pF
SMF15C ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
(Note 2) 15 V
Breakdown Voltage V
BR
I
T
= 1 mA, (Note 3) 17 19 V
Reverse Leakage Current I
R
V
RWM
= 15 V 0.01 1.0
mA
Clamping Voltage V
C
I
PP
= 1 A (8 x 20 ms Waveform)
23 V
Clamping Voltage V
C
I
PP
= 5 A (8 x 20 ms Waveform)
29 V
Maximum Peak Pulse Current I
PP
8 x 20 ms Waveform
5.0 A
Capacitance C
J
V
R
= 0 V, f = 1 MHz (Line to GND) 33 45 pF
SMF24C ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
(Note 2) 24 V
Breakdown Voltage V
BR
I
T
= 1 mA, (Note 3) 26.7 32 V
Reverse Leakage Current I
R
V
RWM
= 24 V 0.01 1.0
mA
Clamping Voltage V
C
I
PP
= 1 A (8 x 20 ms Waveform)
40 V
Clamping Voltage V
C
I
PP
= 2.5 A (8 x 20 ms Waveform)
44 V
Maximum Peak Pulse Current I
PP
8 x 20 ms Waveform
2.5 A
Capacitance C
J
V
R
= 0 V, f = 1 MHz (Line to GND) 21 25 pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
SMF05C, SMF12C, SMF15C, SMF24C
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise specified)
Figure 1. Pulse Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. 8 × 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0204060
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
80
Figure 3. Clamping Voltage vs Peak Pulse Current
100
10
1
0510
I
PP
, PEAK PULSE CURRENT (A)
V
CLAMP
, CLAMPING VOLTAGE (V)
15
Figure 4. Junction Capacitance vs Reverse Voltage
100
10
1
05
V
BR
, REVERSE VOLTAGE (V)
JUNCTION CAPACITANCE (pF)
10 15 20 25
SMF05C
SMF12C
SMF15C
SMF24C
SMF05C
SMF12C
SMF15C
SMF24C
PEAK POWER DISSIPATION (%)
P1-P3P4-P6

SMF24CT1

Mfr. #:
Buy SMF24CT1
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 5 Line TVS Array
Lifecycle:
New from this manufacturer.
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