IRLIB9343
2 www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -55 ––– ––– V
∆ΒV
DSS
∆T
J
Breakdown Voltage Temp. Coefficient ––– -52 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 93 105
mΩ
––– 150 170
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V
∆V
GS(th)
∆T
J
Gate Threshold Voltage Coefficient ––– -3.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -2.0 µA
––– ––– -25
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100 nA
Gate-to-Source Reverse Leakage ––– ––– 100
g
fs
Forward Transconductance 5.3 ––– ––– S
Q
g
Total Gate Charge ––– 31 47
Q
gs
Pre-Vth Gate-to-Source Charge ––– 7.1 –––
V
GS
= -10V
Q
gd
Gate-to-Drain Charge ––– 8.5 –––
I
D
= -14A
Q
godr
Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19
t
d(on)
Turn-On Delay Time ––– 9.5 –––
t
r
Rise Time ––– 24 –––
t
d(off)
Turn-Off Delay Time ––– 21 ––– ns
t
f
Fall Time ––– 9.5 –––
C
iss
Input Capacitance ––– 660 –––
C
oss
Output Capacitance ––– 160 ––– pF
C
rss
Reverse Transfer Capacitance ––– 72 –––
C
oss
Effective Output Capacitance ––– 280 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
g
A
E
AR
Repetitive Avalanche Energy
g
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– -14
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -60
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 57 86 ns
Q
rr
Reverse Recovery Charge ––– 120 180 nC
V
GS
= -4.5V, I
D
= -2.7A
e
––– 190
See Fig. 14, 15, 17a, 17b
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -14A
Typ. Max.
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
= 0V to -44V
V
GS
= 0V
T
J
= 25°C, I
F
= -14A
di/dt = 100A/µs
e
T
J
= 25°C, I
S
= -14A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.4A
e
MOSFET symbol
R
G
= 2.5Ω
V
DS
= -25V, I
D
= -14A
V
DS
= -44V
Conditions
and center of die contact
V
DD
= -28V, V
GS
= -10V
e
V
DS
= -50V