Document Number: 83503 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.3, 14-Oct-09 815
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature
Vishay Semiconductors
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
- 25 0 25 50
0
0.5
1.0
1.5
2.0
CTR
rel
- Relative Current Transfer Ratio
95 11025
75
T
amb
- Ambient Temperature (°C)
V
CE
= 5 V
I
F
= 5 mA
0255075
1
10
100
1000
10 000
I
CEO
- Collector Dark Current,
100
95 11026
with Open Base (nA)
V
CE
= 20 V
I
F
= 0
T
amb
- Ambient Temperature (°C)