DG441LE, DG442LE
www.vishay.com
Vishay Siliconix
S16-0392-Rev. A, 07-Mar-16
6
Document Number: 76754
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
SPECIFICATIONS
a
(single supply 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 3 V, V- = 0 V
V
IN
= 0.4 V
f
TEMP.
b
TYP.
c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN.
d
MAX.
d
MIN.
d
MAX.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 0 3 0 3 V
Drain-Source
On-Resistance
R
DS(on)
V+ = 2.7 V, V- = 0 V
I
S
= 5 mA, V
D
= 0.5 V, 2.2 V
Room 106 - 130 - 130
Full - - 150 - 140
On-Resistance Match
Between Channels
e
R
DS(on)
I
S
= 5 mA, V
D
= 2.2 V Room 1 - 3 - 3
Switch Off
Leakage Current
g
I
S(off)
V+ = 3.3, V- = 0 V
V
D
= 1 V, 2 V, V
S
= 2 V, 1 V
Room - -1 1 -1 1
nA
Full - -15 15 -10 10
I
D(off)
Room - -1 1 -1 1
Full - -15 15 -10 10
Channel On
Leakage Current
g
I
D(on)
V+ = 3.3 V, V- = 0 V
V
S
= V
D
= 1 V, 2 V
Room - -1 1 -1 1
Full - -15 15 -10 10
Digital Control
Input Current, V
IN
Low
e
I
IL
V
IN
under test = 0.4 V Full 0.005 -1.5 1.5 -1 1
μA
Input Current, V
IN
High
e
I
IH
V
IN
under test = 2.4 V Full 0.005 -1.5 1.5 -1 1
Dynamic Characteristics
Turn-On Time t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 1.5 V, see figure 2
Room 141 - 200 - 200
ns
Full - - 220 - 210
Turn-Off Time t
OFF
Room 84 - 120 - 120
Full - - 140 - 130
Charge Injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 10 nF Room 2 - - - - pC
Off Isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room 68 - - - -
dB
Channel-to-Channel
Crosstalk
e
X
TALK
Room 107 - - - -
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 6 - - - -
pFDrain Off Capacitance
e
C
D(off)
Room 7 - - - -
Channel On Capacitance
e
C
D(on)
Room 15 - - - -
