IRL5602S
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.4 V T
J
= 25°C, I
S
= -12A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 58 88 ns T
J
= 25°C, I
F
= -12A
Q
rr
Reverse RecoveryCharge ––– 54 81 nC di/dt = -100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
£ -12A, di/dt £ 120A/µs, V
DD
£ V
(BR)DSS
,
T
J
£ 175°C
Notes:
Starting T
J
= 25°C, L = 3.0mH
R
G
= 25W, I
AS
= -14A. (See Figure 12)
Pulse width £ 300µs; duty cycle £ 2%.
Source-Drain Ratings and Characteristics
-24
-96
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V V
GS
= 0V, I
D
= -250µA
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient ––– -0.013 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.042 V
GS
= -4.5V, I
D
= -12A
––– ––– 0.062 W V
GS
= -2.7V, I
D
= -10A
––– ––– 0.075 V
GS
= -2.5V, I
D
= -10A
V
GS(th)
Gate Threshold Voltage -0.7 ––– -1.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 12 ––– ––– S V
DS
= -15V, I
D
= -12A
––– ––– -25 V
DS
= -20V, V
GS
= 0V
––– ––– -250 V
DS
= -16V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 500
nA
V
GS
= -8.0V
Gate-to-Source Reverse Leakage ––– ––– -500 V
GS
= 8.0V
Q
g
Total Gate Charge ––– ––– 44 I
D
= -12A
Q
gs
Gate-to-Source Charge ––– ––– 8.7 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 19 V
GS
= -4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 9.7 ––– V
DD
= -10 V
t
r
Rise Time ––– 73 ––– I
D
= -12A
t
d(off)
Turn-Off Delay Time ––– 53 ––– R
G
= 6.0W, V
GS
= 4.5V
t
f
Fall Time ––– 84 ––– R
D
= 0.8W, See Fig. 10
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 1460 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 790 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 370 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance 7.5
ns
I
DSS
Drain-to-Source Leakage Current
µA
S
D
G
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
