Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
DPG60C300HB
P1-P3
P4-P5
DPG60C300HB
S
Ø
P
Ø
P1
D2
D1
E1
4
123
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
A
A2
A1
C
Sym.
Inches
Millimeter
min.
max.
min.
max.
A
0.185
0.209
4.70
5.30
A1
0.
087
0.1
02
2.21
2.59
A2
0.
059
0.0
98
1.50
2.49
D
0.819
0.845
20.79
2
1.45
E
0.610
0.640
15.48
1
6.24
E2
0.
170
0.2
16
4.31
5.48
e
0.21
5 BSC
5.4
6 BSC
L
0.780
0.800
19.80
2
0.30
L1
-
0.177
-
4.49
Ø P
0.14
0
0.144
3.
55
3.
65
Q
0.212
0.244
5.38
6.19
S
0.24
2 BSC
6.1
4 BSC
b
0.039
0.055
0.99
1.40
b2
0.065
0.094
1.65
2.39
b4
0.102
0.135
2.59
3.43
c
0.015
0.035
0.38
0.89
D1
0.515
-
13.07
-
D2
0.
020
0.053
0.
51
1.
35
E1
0.530
-
13.45
-
Ø P1
-
0.29
-
7.39
1
2
3
Outlines
TO-247
IXYS reserv
es the right to change limits, condi
tions and dimensions.
20131125b
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
DPG60C300HB
Z
thJC
[K/W]
0.0
0.4
0.8
1.2
1.6
2.0
20
40
60
80
0
200
400
600
20
30
40
50
60
70
1
10
10
0
10
0
0
10
0
0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°
C]
-di
F
/dt
[A/
μ
s]
t[
m
s
]
0
200
400
600
0
100
200
300
400
500
600
0
2
4
6
8
10
12
0
200
400
600
2
4
6
8
10
12
14
16
0
200
400
600
0.1
0.2
0.3
0.4
Q
rr
[
μ
C]
V
F
i
d
-
]
V
[
F
/dt
[A/
μ
s]
I
F
=6
0
A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1
Forward current
I
F
versus V
F
Fig. 2
Typ. reverse recov
. cha
rge
Q
rr
versus
-di
F
/dt
Fig. 3
Typ. reverse recov. current
I
RM
versus -di
F
/dt
Fig. 4
Dynamic
parameters
Q
rr
,I
RM
versus
T
VJ
Fig. 5
Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6
T
yp. forward recovery voltage
V
FR
&t
i
m
e
t
fr
versus di
F
/dt
Fig. 8
Tr
ansient thermal imped
ance junction to case
25°C
I
F
[A]
-di
F
/dt
[A/
μ
s]
I
RM
[A]
t
rr
[ns]
-di
F
/dt
[A/
μ
s]
t
fr
[ns]
V
FR
[V]
02
0
0
4
0
0
6
0
0
2
4
6
8
10
12
14
16
E
rec
[
μ
J]
-di
F
/dt
[ A/
μ
s]
Fig. 7
T
yp. recovery energy
E
rec
versus -di
F
/dt
I
F
= 15 A
30 A
60 A
T
VJ
= 125°C
V
R
=2
0
0
V
T
VJ
=1
2
5
°
C
V
R
= 2
00 V
T
VJ
= 125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
I
F
=3
0
A
T
VJ
= 125°C
V
R
= 200 V
I
F
=6
0
A
30 A
15 A
I
F
=6
0
A
30 A
15 A
R
thi
[K/W]
0.13
11
0.13
77
0.34
68
0.23
94
0.09
5
t
i
[s]
0.001
8
0.00
2
0.01
2
0.07
0.34
5
Fast Diode
IXYS reserv
es the right to change limits, condi
tions and dimensions.
20131125b
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
P1-P3
P4-P5
DPG60C300HB
Mfr. #:
Buy DPG60C300HB
Manufacturer:
Littelfuse
Description:
Diodes - General Purpose, Power, Switching 60 Amps 300V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
DPG60C300HB
