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PBSS5620PA,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 13 April 2010 6 of 15
NXP Semiconductors
PBSS5620PA
20 V, 6 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −16 V; I
E
=0A - - −100 nA
V
CB
= −16 V; I
E
=0A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −16 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −0.5 A 230 345 -
I
C
= −1 A 220 320 -
I
C
= −2 A 190 275 -
I
C
= −6 A 110 155 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −25 −40 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −50 −80 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −80 −130 mV
I
C
= −2A; I
B
= −20 mA
[1]
- −135 −210 mV
I
C
= −3A; I
B
= −30 mA
[1]
- −215 −325 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −150 −230 mV
I
C
= −6A; I
B
= −300 mA
[1]
- −235 −350 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −6A; I
B
= −300 mA
[1]
- 3958mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −10 mA
[1]
- −0.75 −0.9 V
I
C
= −6A; I
B
= −300 mA
[1]
- −1.03 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.76 −0.9 V
t
d
delay time V
CC
= −9V; I
C
= −2A;
I
Bon
= −0.1 A;
I
Boff
=0.1A
-19-ns
t
r
rise time - 59 - ns
t
on
turn-on time - 78 - ns
t
s
storage time - 265 - ns
t
f
fall time - 55 - ns
t
off
turn-off time - 320 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
50 80 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
- 7590pF
PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 13 April 2010 7 of 15
NXP Semiconductors
PBSS5620PA
20 V, 6 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
006aab991
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
V
CE
(V)
0.0 −5.0−4.0−2.0 −3.0−1.0
006aab992
−4.0
−2.0
−6.0
−8.0
I
C
(A)
0.0
−5
−10
−40
−45
−35
−30
−25
−20
−15
I
B
(mA) = −50
006aab993
−0.4
−0.8
−1.2
V
BE
(V)
0.0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
006aab994
−0.4
−0.8
−1.2
V
BEsat
(V)
0.0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 13 April 2010 8 of 15
NXP Semiconductors
PBSS5620PA
20 V, 6 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab995
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
006aab996
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(3)
(2)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aab997
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aab998
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(3)
(2)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS5620PA,115

Mfr. #:
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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 20V 6A PNP LO VCEsat TRANSISTOR
Lifecycle:
New from this manufacturer.
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