APT2X51DC120J
APT2X50DC120J
APT2X51_50DC120J – Rev 1 October, 2012
www.microsemi.com
2
4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.6 1.8
V
F
Diode Forward Voltage I
F
= 50A
T
j
= 175°C 2.3 3.0
V
T
j
= 25°C 160 1000
I
RM
Maximum Reverse Leakage Current V
R
= 1200V
T
j
= 175°C 280 5000
µA
Q
C
Total Capacitive Charge
I
F
= 50A, V
R
= 600V
di/dt =2500A/µs
200 nC
f = 1MHz, V
R
= 200V 480
C Total Capacitance
f = 1MHz, V
R
= 400V 345
pF
Thermal and package characteristics (per leg)
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 0.32
R
thJA
Junction to Ambient (IGBT & Diode) 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 175
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
4
2
1
3
