NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High f
T
, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
2.5 V
Mean Collector Current (Averaged over 100
µs)
I
AV
25 mA
Collector Current I
CM
50 mA
Power Dissipation at T
amb
=25°C P
tot
350 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
V
CEO(SUS)
15 V I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA, I
C
=0
Collector Cut-Off Current I
CBO
10 nA V
CB
=15V, I
E
=0
Emitter Cut-Off Current I
CES
10
µA
V
CE
=15V, V
BE
=0
Static Forward Current
Transfer Ratio
h
FE
25
20
150
125
I
C
=2mA, V
CE
=1V*
I
C
=25mA, V
CE
=1V*
Transition Frequency f
T
1.0
1.3
GHz
GHz
I
C
=2mA, V
CE
=5V, f=400MHz
I
C
=25mA, V
CE
=5V, f=400MHz
Capacitance, Collector
Depletion Layer
C
TC
1.5 pF V
CB
=10V, I
E
=I
e
=0, f=1MHz
Capacitance, Emitter
Depletion Layer
C
TE
2.0 pF VEB=0.5V, I
C
=I
c
=0, f=1MHz
Feedback Capacitance -C
re
0.85 pF V
CE
=5V, I
C
=2mA, f=1MHz
Feedback Time Constant r
bb
C
b
c
2.0 12 ps V
CB
=5V, -I
E
=2mA, f=10.7MHz
ZTX325
3-161
C
B
E
E-Line
TO92 Compatible
3-162
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure N 5.0 dB f=500MHz, V
CE
=5V, I
C
=2mA,
R
S
=50Ω
Intermodulation
Distortion
d
im
-53 dB I
C
=14mA, V
CE
=6V, f=217MHz
V
0
=100mV, R
L
=37.5Ω,
f
1
=183MHz, f
2
=200MHz
Output Power
(at T
case
=25°C)*
P
O
175 mW V
CE
=13.5V, I
C
=22.5mA
P
in
=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
ZTX325
TYPICAL CHARACTERISTICS
f
T
v I
C
I
C
-
Collector Current (mA)
f
T
- (GHz)
1
µ
10µ
10m
100
µ
1m
IC - Collector Current (A)
h
FE
v I
C
h
F
E
- Norma
l
ised
Ga
i
n
20
40
60
80
1000.1
f=400MHz
1000
1
2
3
VCE - (V)
C
RE
v V
CE
C
RE
-
(
p
F
)
0
10
20
30
0.5
1.0
1.5
2.0
V
CE
=10V
0
110
V
CE
=10V
V
CE
=5V
100m
f=1MHz
