MPSW51ARLRA Datasheet MPSW51ARLRPG, MPSW51A, MPSW51ARLRA | P1-P3

June, 2013 − Rev. 5

1 Publication Order Number:

MPSW51/D

MPSW51, MPSW51A

One Watt High Current

Transistors

PNP Silicon

Features

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPSW51

MPSW51A

V

CEO

−30

−40

Vdc

Collector−Base Voltage

MPSW51

MPSW51A

V

CBO

−40

−50

Vdc

Emitter−Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

C

−1000 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

MPS

W51x

AYWW G

G

x = 51A Devices

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

COLLECTOR

3

2

BASE

1

EMITTER

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

1

2

3

1

2

BENT LEADSTRAIGHT LEAD

3

MPSW51, MPSW51A

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= −1.0 mAdc, I

B

= 0) MPSW51

MPSW51A

V

(BR)CEO

−30

−40

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= −100 mAdc, I

E

= 0) MPSW51

MPSW51A

V

(BR)CBO

−40

−50

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= −100 mAdc, I

C

= 0)

V

(BR)EBO

−5.0 −

Vdc

Collector Cutoff Current

(V

CB

= −30 Vdc, I

E

= 0) MPSW51

(V

CB

= −40 Vdc, I

E

= 0) MPSW51A

I

CBO

−

−0.1

mAdc

Emitter Cutoff Current

(V

EB

= −3.0 Vdc, I

C

= 0)

I

EBO

− −0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= −10 mAdc, V

CE

= −1.0 Vdc)

(I

C

= −100 mAdc, V

CE

= −1.0 Vdc)

(I

C

= −1000 mAdc, V

CE

= −1.0 Vdc)

h

FE

55

60

50

−

Collector−Emitter Saturation Voltage

(I

C

= −1000 mAdc, I

B

= −100 mAdc)

V

CE(sat)

− −0.7

Vdc

Base −Emitter On Voltage

(I

C

= −1000 mAdc, V

CE

= −1.0 Vdc)

V

BE(on)

− −1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −50 mAdc, V

CE

= −10 Vdc, f = 20 MHz)

f

T

50 −

MHz

Output Capacitance

(V

CB

= −10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

− 30

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

MPSW51G TO−92

(Pb−Free)

5000 Units / Bulk

MPSW51AG TO−92

(Pb−Free)

5000 Units / Bulk

MPSW51RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

MPSW51ARLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

MPSW51ARLRPG TO−92

(Pb−Free)

2000 / Ammo Pack

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MPSW51, MPSW51A

http://onsemi.com

3

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

Figure 3. “ON” Voltages Figure 4. Temperature Coefficient

-1000-10

I

C

, COLLECTOR CURRENT (mA)

200

100

70

I

B

, BASE CURRENT (mA)

-5.0 -50

-0.6

-0.2

0

-100 -500-1.0

I

C

, COLLECTOR CURRENT (mA)

0

-1.0

-0.8

-0.6

-0.4

-0.2

I

C

, COLLECTOR CURRENT (mA)

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-200

h

FE

, CURRENT GAIN

, COLLECTOR VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

50

20

-100-20 -50 -200 -500 -10 -20-0.05 -0.1 -0.2 -2.0

-0.4

-0.8

-1.0

-2.0 -5.0 -10 -20 -50

T

J

= 25°C

V

BE(SAT)

@ I

C

/I

B

= 10

-0.01 -0.5 -1.0-0.02 -100

V

CE

-1000

-100 -500-1.0 -200-2.0 -5.0 -10 -20 -50

qV

B

for V

BE

-1000

qV °

V

CE

= -1.0 V

T

J

= 25°C

V

CE(SAT)

@ I

C

/I

B

= 10

V

BE(ON)

@ V

CE

= -1.0 V

T

J

= 25°C

I

C

=

-100

mA

I

C

=

-50 mA

I

C

=

-1000 mA

I

C

=

-10 mA

I

C

=

-500 mA

I

C

=

-250

mA

, TEMPERATURE COEFFICIENT (mV/ C)

B

MPSW51ARLRA

MPSW51ARLRA

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