NTHD4102PT1G

NTHD4102P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
10
4
600
400
200
0
8
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
032
4
1
0
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
oss
C
iss
C
rss
I
D
= 2.7 A
T
J
= 25°C
1000
65
2
3
Q2
Q1
101
10
1
100
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
DD
= 10 V
I
D
= 1.0 A
V
GS
= 4.5 V
1000
800
5
t
d(off)
t
d(on)
t
f
t
r
V
GS
V
DS
6
418
0.9
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
1.20.50.4
1
5
Figure 6. Capacitance Variation
Figure 7. GatetoSource and DraintoSource
Voltage vs. Total Gate Charge
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
0.01
100
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 8 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
dc
10 ms
2
700
500
300
100
900
7
QT
100
0.6 0.80.7
0.1
1
12 14 16 18 20
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
2
3
4
1.0 1.1
10 ms
NTHD4102P
http://onsemi.com
5
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A03
ISSUE K
Basic
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
E
A
b
e
e1
D
1234
8765
c
L
1234
8765
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
0.05 (0.002)
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.05 1.10 0.039
INCHES
b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42 0.011
0.041 0.043
0.012 0.014
0.006 0.008
0.120 0.122
0.065 0.067
0.025 BSC
0.022 BSC
0.014 0.017
NOM MAX
1.80 1.90 2.00 0.071 0.075 0.079
H
E
5° NOM
q
5° NOM
H
E
q
RESET
0.457
0.018
2.032
0.08
0.65
0.025
PITCH
0.66
0.026
ǒ
mm
inches
Ǔ
2.362
0.093
1
8X
8X
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NTHD4102P/D
ChipFET is a trademark of Vishay Siliconix.
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NTHD4102PT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -4.1A Dual P-Channel
Lifecycle:
New from this manufacturer.
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