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H11A817C300W

P1-P3P4-P6P7-P9
PACKAGE
11/18/03
Page 1 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
H11AA814 SCHEMATIC
H11A617 & H11A817 SCHEMATIC
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BV
CEO
of 70V guaranteed
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
4
1
1
2
4
3 EMITTER
COLLECTOR
1
2
4
3 EMITTER
COLLECTORANODE
CATHODE
11/18/03
Page 2 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
*Typical values at T
A
= 25°C.
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature
T
STG
All -55 to +150 °C
Operating Temperature
T
OPR
All -55 to +100 °C
Lead Solder Temperature
T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation (-55°C to 50 °C)
P
D
All 200 mW
EMITTER
Continuous Forward Current
I
F
All 50 mA
Reverse Voltage
V
R
H11A617A/B/C/D
H11A817/A/B/C/D
6
5
V
Forward Current - Peak (1 µs pulse, 300 pps)
I
F
(pk)
All 1.0 A
LED Power Dissipation (25°C ambient)
Derate above 25°C
P
D
All
100 mW
1.33 mW/°C
DETECTOR
Collector-Emitter Voltage
V
CEO
All 70 V
Emitter-Collector Voltage
V
ECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6
V
Continuous Collector Current
I
C
All 50 mA
Detector Power Dissipation (25°C ambient)
Derate above 25°C
P
D
All
150 mW
2.0 mW/°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
EMITTER
(I
F
= 60 mA)
V
F
H11A617A/B/C/D 1.35 1.65
V
Input Forward Voltage
(I
F
= 20 mA)
H11A817/A/B/C/D 1.2 1.5
(I
F
= ±20 mA)
H11AA814/A 1.2 1.5
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
H11A617A/B/C/D
.001 10 µA
(V
R
= 5.0 V)
H11A817/A/B/C/D
DETECTOR
Collector-Emitter Breakdown
Voltage
(I
C
= 1.0 mA, I
F
= 0) BV
CEO
ALL 70 100 V
Emitter-Collector Breakdown
Voltage
(I
E
= 100 µA, I
F
= 0) BV
ECO
H11AA814/A 6
10 VH11A617A/B/C/D 7
H11A817/A/B/C/D 6
Collector-Emitter Dark Current
(V
CE
= 10V, I
F
= 0) I
CEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
1
100
nA
H11A617A/B 50
Collector-Emitter Capacitance
(V
CE
= 0 V, f = 1 MHz) C
CE
ALL 8 pF
11/18/03
Page 3 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
*Typical values at T
A
= 25°C.
NOTES
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
Current Transfer
Ratio
(I
F
= ±1 mA, V
CE
= 5 V) (note 1)
CTR
H11AA814 20 300 %
(I
F
= ±1 mA, V
CE
= 5 V) (note 1)
H11AA814A 50 150 %
(I
F
= 10 mA, V
CE
= 5 V) (note 1)
H11A617A 40 80 %
H11A617B 63 125 %
H11A617C 100 200 %
H11A617D 160 320 %
(I
F
= 5 mA, V
CE
= 5 V) (note 1)
H11A817 50 600 %
H11A817A 80 160 %
H11A817B 130 260 %
H11A817C 200 400 %
H11A817D 300 600 %
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
H11A617A 13 %
H11A617B 22 %
H11A617C 34 %
H11A617D 56 %
Collector-Emitter
Saturation Voltage
(I
C
= 1 mA, I
F
= ±20 mA)
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 1 mA, I
F
= 20 mA)
V
CE (SAT)
H11AA814/A 0.2
VH11A617A/B/C/D 0.4
H11A817/A/B/C/D 0.2
AC Characteristic
Rise Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
Ω
) (note 2) t
r
ALL 2.4 18 µs
Fall Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
Ω
) (note 2) t
f
ALL 2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min
V
ISO
5300 Vac(rms)
Isolation Resistance
(V
I-O
= 500 VDC) R
ISO
10
11
Ω
Isolation Capacitance
(V
I-O
= 0, f = 1 MHz) C
ISO
0.5 pf
P1-P3P4-P6P7-P9

H11A817C300W

Mfr. #:
Buy H11A817C300W
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers Optocoupler Phototransistor
Lifecycle:
New from this manufacturer.
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