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IRFR3704TRPBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com 1
12/13/04
IRFR3704PbF
IRFU3704PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Benefits
V
DSS
R
DS(on)
max I
D
20V 9.5mΩ 75A
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D-Pak I-Pak
IRFR3704 IRFU3704
l Ultra-Low R
DS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Notes through are on page 9
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Applications
l High Frequency Buck Converters for
Computer Processor Power
l 100% R
G
Tested
l Lead-Free
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
, T
STG
Junction and Storage Temperature Range °C
Symbol Parameter Typ Max Units
R
θ
JC
Junction-to-Case
––– 1.7
R
θ
JA
Junction-to-Ambient (PCB Mount) *
––– 50 °C/W
R
θ
JA
Junction-to-Ambient
––– 110
V
A
W
-55 to +175
90
0.58
62
Max
75
63
300
20
± 20
PD - 95034A
IRFR/U3704PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
––– 7.3 9.5
––– 11 14
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
––– ––– 10
––– ––– 100
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
g
fs
Forward Transconductance 42 ––– ––– S
Q
g
Total Gate Charge ––– 19 –––
Q
gs
Gate-to-Source Charge ––– 8.1 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.4 –––
Q
OSS
Output Gate Charge ––– 16 24
V
GS
= 0V, V
DS
= 10V
R
G
Gate Resistance 0.3 ––– 3.2
Ω
t
d(on)
Turn-On Delay Time ––– 8.4 –––
t
r
Rise Time ––– 98 –––
t
d(off)
Turn-Off Delay Time ––– 12 ––– ns
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 1996 –––
C
oss
Output Capacitance ––– 1085 –––
C
rss
Reverse Transfer Capacitance ––– 155 –––
Avalanche Characteristics
Symbol
Parameter
Units
E
AS
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Symbol
Parameter
Min
Typ
Max
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
––– 0.88 1.3
––– 0.82 –––
t
rr
Reverse Recovery Time ––– 38 57 ns
Q
rr
Reverse Recovery Charge ––– 45 68 nC
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 50 75 nC
pF
A
Diode Forward Voltage V
––– ––– 75
––– ––– 300
m
Ω
µA
nA
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
T
J
= 125°C, I
F
= 35.5A, V
R
= 20V
di/dt = 100A/µs
T
J
= 125°C, I
S
= 35.5A, V
GS
= 0V
Conditions
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 35.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 35.5A, V
R
= 20V
di/dt = 100A/µs
ƒ = 1.0MHz
216
71
MOSFET symbol
MaxTyp
–––
–––
Conditions
V
DS
= 25V, I
D
= 57A
I
D
= 28.4A
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V
V
DD
= 10V
I
D
= 28.4A
R
G
= 1.8
Ω
R
DS(on)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
IRFR/U3704PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
10
100
1000
3.0 4.0 5.0 6.0 7.0 8.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
75A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
3.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
P1-P3P4-P6P7-P9P10-P10

IRFR3704TRPBF

Mfr. #:
Buy IRFR3704TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 75A DPAK
Lifecycle:
New from this manufacturer.
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