GBU15L05HD2G

GBU15L05~GBU15L06
CREAT BY ART
- Low forward drop enhance the efficiency
- Oxide planar chip junction
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Case: GBU
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Polarity: As marked
Weight: 4 g (approximately)
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
2
tA
2
s
T
J
°C
T
STG
°C
Document Number: DS_D0000071 Version: B15
800
560
GBU
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
MECHANICAL DATA
GBU15L05 GBU15L06
Taiwan Semiconductor
Low VF, Low Noise Sin
g
le-Phase Sin
g
le In-Line Brid
g
e Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
15A, 600V - 800V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 15
I
FSM
630
600
420
600
A
I
FSM
200 A
Rating of fusing ( t<8.3ms) 166
V
Operating junction temperature range - 55 to +150
I
R
5
μA
150
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Peak forward surge current,
8.3 ms single half sine-wave
Peak forward surge current,
1.0 ms single half sine-wave
Maximum Instantaneous Forward Voltage
I
F
= 7.5 A
(Note 1)
T
J
=25°C
T
J
=125°C
V
F
0.75
0.87 0.93
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Typical thermal resistance
R
θJC
R
θJA
3
15
°C/W
0.96
--
800
MAXTYP TYP MAX
-
0.90
PART NO.
*: Optional available
PART NO.
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Document Number: DS_D0000071 Version: B15
X0
D2
C2
PACKING
CODE
PACKING CODE
SUFFIX
(*)
AEC-Q101 qualified
Green compound
PACKAGE PACKING
Forming
PART NO.
SUFFIX
H 20 / Tube
20 / Tube
GBUG
PACKING CODE
SUFFIX
PACKING CODE
PART NO.
SUFFIX
GBU15L05 H D2 G
GBU15L0x
(Note 1)
GBU15L05~GBU15L06
Taiwan Semiconductor
ORDERING INFORMATION
GBU15L05HD2G
Note 1: "x" defines voltage from 600V (GBU15l05) to 800V (GBU15l06)
EXAMPLE
PREFERRED P/N DESCRIPTION
0
5
10
15
20
0 25 50 75 100 125 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
0
50
100
150
200
250
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.01
0.1
1
10
100
0 20406080100
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=25
°
C
T
J
=125
°
C
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
T
J
=25
°
C
T
J
=125
°
C
600V
800V
Min Max Min Max
A 21.80 22.30 0.858 0.878
B 3.50 4.10 0.138 0.161
C 7.40 7.90 0.291 0.311
D 1.65 2.16 0.065 0.085
E 2.16 2.54 0.085 0.100
F 1.65 2.03 0.065 0.080
G 1.52 2.03 0.060 0.080
H 1.02 1.27 0.040 0.050
I 4.83 5.33 0.190 0.210
J 3.30 3.56 0.130 0.140
K 18.30 18.80 0.720 0.740
L 17.50 18.00 0.689 0.709
M 1.90 2.16 0.075 0.085
N 0.46 0.56 0.018 0.022
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D0000071 Version: B15
MARKING DIAGRAM
GBU
GBU15L05~GBU15L06
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
0
50
100
150
200
250
300
350
400
450
500
0.1 1 10 100
CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p

GBU15L05HD2G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Bridge Rectifiers 15A 600V Standard Bridge Rectif
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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