LT1057/LT1058
4
10578fd
ELECTRICAL CHARACTERISTICS
(LT1057/LT1058 SW Package Only), V
S
= ±15V, T
A
= 25°C, V
CM
= 0V
unless otherwise noted.
The
l denotes the specifications which apply over the temperature range of 0°C ≤ T
A
≤ 70°C or –40°C ≤ T
A
≤ 85°C (LT1057IS8),
otherwise specifications are T
A
= 25°C. V
S
= ±15V, V
CM
= 0V, unless noted.
SYMBOL PARAMETER CONDITIONS
LT1057AC
LT1058AC
LT1057C
LT1058C
UNITSMIN TYP MAX MIN TYP MAX
V
OS
Input Offset Voltage LT1057
LT1057IS8
LT1057S8
LT1058
l
l
l
l
250
300
800
1200
330
500
400
400
1400
2300
1900
1800
μV
μV
μV
μV
Average Temperature
Coefficient of Input
(Offset Voltage)
LT1057 H/J8 Package
N8 Package
LT1057S8 (Note 5)
LT1057IS8 (Note 5)
LT1058 J Package (Note 5)
N Package (Note 5)
l
l
l
l
l
l
1.8
3
2.5
4
7
10
10
15
2.3
4
4
4.5
3
5
12
16
16
16
15
22
μV/°C
μV/°C
μV/°C
μV/°C
μV/°C
μV/°C
I
OS
lnput Offset Current Warmed Up, T
A
= 70°C
LT1057IS8
l
18 150 20
35
250
600
pA
I
B
Input Bias Current Warmed Up, T
A
= 70°C
LT1057IS8
l
±50 ±250 ±60
±100
±350
±900
pA
A
VOL
Large-Signal Voltage Gain V
O
= ±10V, R
L
= 2k
l
70 220 50 200 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ±10.4V
l
85 98 80 96 dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±18V
l
87 102 84 100 dB
V
OUT
Output Voltage Swing R
L
= 2k
l
±12 ±12.8 ±12 ±12.8 V
I
S
Supply Current Per Amplifier
T
A
= 70°C
l
14
2.8
1.5
3.2 mA
mA
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
i
n
Input Noise Current Density f
O
= 10Hz, 1kHz 1.8 fA/√Hz
A
VOL
Large-Signal Voltage Gain V
O
= ±10V R
L
= 2k
R
L
= 1k
100
50
300
220
V/mV
Input Voltage Range ±10.5 14.3
–11.5
V
CMRR Common Mode Rejection Ratio V
CM
= ±15V LT1057
LT1058
82
80
98
98
dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±18V 86 102 dB
V
OUT
Output Voltage Swing R
L
= 2k ±12 ±13 V
SR Slew Rate 8 13 V/µs
GBW Gain-Bandwidth Product f = 1MHz (Note 6) 3 5 MHz
I
S
Supply Current Per Amplifier 1.7 2.8 mA
Channel Separation DC to 5kHz, V
IN
= ±10V 130 dB
LT1057/LT1058
5
10578fd
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Typical parameters are defined as the 60% yield of distributions of
individual amplifiers; (i.e., out of 100 LT1058s or, 100 LT1057s, typically
240 op amps, or 120 for the LT1057, will be better than the indicated
specification).
Note 3: This parameter is tested on a sample basis only.
The l denotes the specifications which apply over the temperature range of –55°C ≤ T
A
≤ 125°C, V
S
= ±15V, V
CM
= 0V,
unless otherwise noted.
SYMBOL PARAMETER CONDITIONS
LT1057AM
LT1058AM
LT1057M
LT1058M
UNITSMIN TYP MAX MIN TYP MAX
V
OS
Input Offset Voltage LT1057
LT1058
l
l
300
380
1100
1600
400
550
2000
2500
μV
μV
Average Temperature Coefficient
of Input Offset Voltage
LT1057
LT1058 (Note 5)
l
l
2.0
2.5
7
10
2.5
3
12
15
μV/°C
μV/°C
I
OS
lnput Offset Current Warmed Up, T
A
= 125°C 0.15 2 0.2 3 nA
I
B
Input Bias Current Warmed Up, T
A
= 125°C ±0.6 ±4.5 ±0.7 ±6 nA
A
VOL
Large-Signal Voltage Gain V
O
= ±10V, R
L
= 2k
l
40 120 30 110 V/mV
CMRR Common Mode Rejection Ratio V
CM
= ±10.4V
l
84 97 80 95 dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±17V
l
86 100 83 98 dB
V
OUT
Output Voltage Swing R
L
= 2k
l
±12 ±12.7 ±12 ±12.6 V
I
S
Supply Current Per Amplifier T
A
= 125°C 1.25 1.9 1.3 2.2 mA
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
Input Offset Voltage LT1057
LT1058S
LT1058IS
l
l
l
0.5
0.6
0.7
2.5
3.0
4.0
mV
Average Temperature Coefficient of
Input Offset Voltage
l
5 µV/°C
l
OS
Input Offset Current Warmed Up, T
A
= 70°C
Warmed Up, T
A
= 85°C
20
35
250
400
pA
l
B
Input Bias Current Warmed Up, T
A
= 70°C
Warmed Up, T
A
= 85°C
±60
±100
±400
±700
pA
A
VOL
Large-Signal Voltage Gain V
O
= ±10V, R
L
= 2k LT1057
LT1058
l
l
50
40
200
200
mV
CMRR Common Mode Rejection Ratio V
CM
= ±10.5V LT1057
LT1058
l
l
80
78
96
96
dB
PSRR Power Supply Rejection Ratio V
S
= ±10V to ±18V LT1057
LT1058
l
l
84
82
100
100
dB
V
OUT
Output Voltage Swing R
L
= 2k
l
±12 ±12.8 V
(LT1057/LT1058 SW Package Only). The l denotes specifications which
apply over the temperature range of V
S
= ±15V, V
CM
= 0V, 0°C ≤ T
A
≤ 70°C (LT1057SW, LT1058SW) or –40°C ≤ T
A
≤ 85°C
(LT1057ISW, LT1058ISW), unless otherwise noted.
Note 4: Current noise is calculated from the formula:
i
n
= (2ql
b
)
1/2
where q = 1.6 • 10
–19
coulomb. The noise of source resistors up to 1G
swamps the contribution of current noise.
Note 5: This parameter is not 100% tested.
Note 6: Gain-bandwidth product is not tested. It is guaranteed by design
and by inference from the slew rate measurement.
LT1057/LT1058
6
10578fd
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias and Offset Currents
vs Temperature
Input Bias Current Over
the Common-Mode Range
Warm-Up Drift
Distribution of Offset Voltage Drift
with Temperature
(H and J Package)
Distribution of Offset Voltage
Drift with Temperature
(Plastic N Package)
Long-Term Drift of
Representative Units
Voltage Noise vs Frequency
0.1Hz to 10Hz Noise
Voltage Gain vs Temperature
AMBIENT TEMPERATURE (°C)
0
INPUT BIAS AND OFFSET CURRENT (pA)
100
300
1000
100
10578 G01
30
10
3
25
50
75
125
V
S
= ±15V
V
CM
= 0V
WARMED UP
BIAS CURRENT
OFFSET CURRENT
COMMON MODE INPUT VOLTAGE (V)
–15
–0.2
INPUT BIAS CURRENT, T
A
= 125°C (nA)
INPUT BIAS CURRENT, T
A
= 25°C TO 70°C (pA)
0
0.4
0.6
0.8
5
1.6
10578 G02
0.2
–5
–10
10
0 15
1.0
1.2
1.4
–20
0
40
60
80
160
20
100
120
140
V
S
= ±15V
T
A
= 125°C
T
A
= 25°C
T
A
= 70°C
TIME AFTER POWER ON (MINUTES)
0
CHANGE IN OFFSET VOLTAGE (µV)
60
80
100
4
10578 G03
40
20
0
1
2
3
5
V
S
= ± 15V
T
A
= 25°C
LT1058 N PACKAGE
LT1057 N, LT1058 J PACKAGE
LT1057 H PACKAGE
LT1057 J PACKAGE
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
–12
0
NUMBER OF UNITS
20
40
60
80
–6 0
6
12
10578 G04
100
120
–9 –3
3
9
1
2
4
32
70
96
112
5
2
V
S
= ±15V
LT1057H: 102 OP AMPS
LT1057J: 130 OP AMPS
LT1058J: 136 OP AMPS
368 OP AMPS
24
16
4
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
–12
0
NUMBER OF UNITS
20
40
60
80
–6 0
6
12
10578 G05
100
120
–9 –3
3
9
3
11
31
65
70
22
4
V
S
= ±15V
LT1057N: 180 OP AMPS
LT1058N: 176 OP AMPS
356 OP AMPS
27
9
60
44
5
1 UNIT EACH AT
–19, –16, –13
14, 16µV/°C
TIME (MONTHS)
0
OFFSET VOLTAGE CHANGE (µV)
10
30
50
4
10578 G06
–10
–30
0
20
40
–20
–40
–50
1
2
3
5
V
S
= ±15V
T
A
= 25°C
FREQUENCY (Hz)
3 10 30 100 300 1000 3000 10000
10
RMS VOLTAGE NOISE DENSITY (nV/Hz)
30
20
1000
70
50
10578 G07
1/f CORNER = 28Hz
V
S
= ±15V
T
A
= 25°C
TIME (SECONDS)
0
NOISE VOLTAGE (1µV/DIV)
8
10578 G08
2
4
6
10
V
S
= ±15V
T
A
= 25°C
TEMPERATURE (°C)
–25
10
100
30
1000
300
25
75
10578 G09
VOLTAGE GAIN (V/mV)
–75
125
V
S
= ±15V
V
0
= ±10V
R
L
= 2k
R
L
= 1k

LT1058CN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
High Speed Operational Amplifiers 4x JFET In Prec Hi Speed Op Amps
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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