APTCV60TLM24T3G Datasheet APTCV60TLM24T3G | P1-P3

APTCV60TLM24T3G

APTCV60TLM24T3G – Rev 3 November, 2017

www.microsemi.com

1-12

All ratings @ T

j

= 25°C unless otherwise specified

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

All multiple inputs and outputs must be shorted together

Example: 10/11/12 ; 7/8 …

Trench & Field Stop IGBT3 Q2, Q3:

V

CES

= 600V ; I

C

= 75A @ Tc = 80°C

Super junction MOSFET Q1, Q4:

V

DSS

= 600V ; I

D

= 70A @ Tc = 80°C

Application

 Solar converter

 Uninterruptible Power Supplies

Features

 Q2, Q3 Trench + Field Stop IGBT3

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Low leakage current

- RBSOA and SCSOA rated

 Q1, Q4 Super junction MOSFET

- Ultra low R

DSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

 Kelvin emitter for easy drive

 Very low stray inductance

 High level of integration

 Internal thermistor for temperature monitoring

Benefits

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Low profile

 RoHS Compliant

Three level inverter Power Module

APTCV60TLM24T3G

APTCV60TLM24T3G – Rev 3 November, 2017

www.microsemi.com

2-12

Q1 & Q4 Absolute maximum ratings (per Super junction MOSFET)

Q1 & Q4 Electrical Characteristics (per Super junction MOSFET)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

DSS

Zero Gate Voltage Drain Current V

GS

= 0V,V

DS

= 600V 350 µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 47.5A 24

m

V

GS

(

th

)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 2.1 3 3.9 V

I

GSS

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V 200 nA

Q1 & Q4 Dynamic Characteristics

(per Super junction MOSFET)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance

V

GS

= 0V ; V

DS

= 25V

f = 1MHz

14.4

nF

C

oss

Output Capacitance 17

Q

g

Total gate Charge

V

GS

= 10V

V

Bus

= 300V

I

D

= 95A

300

nC

Q

gs

Gate – Source Charge 68

Q

gd

Gate – Drain Charge 102

T

d(on)

Turn-on Delay Time

Inductive Switching (125°C)

V

GS

= 10V

V

Bus

= 400V

I

D

= 95A

R

G

= 2.5

21

ns

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 100

T

f

Fall Time 45

E

on

Turn-on Switching Energy

Inductive switching @ 25°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1350

µJ

E

off

Turn-off Switching Energy 1040

E

on

Turn-on Switching Energy

Inductive switching @ 125°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

2200

µJ

E

off

Turn-off Switching Energy 1270

R

thJC

Junction to Case Thermal Resistance

0.27

°C/W

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Voltage 600 V

I

D

Continuous Drain Current

T

c

= 25°C 95

A

T

c

= 80°C 70

I

DM

Pulsed Drain current 260

V

GS

Gate - Source Voltage ±20 V

R

DSon

Drain - Source ON Resistance 24

m

P

D

Power Dissipation T

c

= 25°C 462 W

I

AR

Avalanche current (repetitive and non repetitive) 15 A

E

AR

Repetitive Avalanche Energy 3

mJ

E

AS

Single Pulse Avalanche Energy 1900

APTCV60TLM24T3G

APTCV60TLM24T3G – Rev 3 November, 2017

www.microsemi.com

3-12

Q2 & Q3 Absolute maximum ratings (per IGBT)

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Voltage 600

V

I

C

Continuous Collector Current

T

C

= 25°C

100

A

T

C

= 80°C

75

I

CM

Pulsed Collector Current T

C

= 25°C 140

V

GE

Gate – Emitter Voltage ±20 V

P

D

Power Dissipation

T

C

= 25°C

250 W

RBSOA Reverse Bias Safe Operating Area

T

J

= 150°C

150A @ 550V

Q2 & Q3 Electrical Characteristics

(per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 600V 250 µA

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 75A

T

j

= 25°C 1.5 1.9

V

T

j

= 150°C 1.7

V

GE

(

th

)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 600µA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 600 nA

Q2 & Q3 Dynamic Characteristics

(per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

4620

pF

C

oes

Output Capacitance 300

C

res

Reverse Transfer Capacitance 140

Q

G

Gate charge

V

GE

=±15V, I

C

=75A

V

CE

=300V

0.8 µC

T

d(on)

Turn-on Delay Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 75A

R

G

= 4.7

110

ns

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 200

T

f

Fall Time 40

T

d(on)

Turn-on Delay Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 75A

R

G

= 4.7

120

ns

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 250

T

f

Fall Time 60

E

on

Turn-on Switching Energy

V

GE

= ±15V

V

Bus

= 300V

I

C

= 75A

R

G

= 4.7

T

j

= 25°C 0.35

mJ

T

j

= 150°C 0.6

E

off

Turn-off Switching Energy

T

j

= 25°C 2.2

mJ

T

j

= 150°C 2.6

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 360V

t

p

≤ 6µs ; T

j

= 150°C

380 A

R

thJC

Junction to Case Thermal Resistance

0.60

°C/W

APTCV60TLM24T3G

APTCV60TLM24T3G

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