G5SBA20-E3/45

G5SBA20, G5SBA60, G5SBA80
www.vishay.com
Vishay General Semiconductor
Revision: 27-Sep-13
1
Document Number: 88608
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit boards
High surge current capability
High case dielectric strength of 1500 V
RMS
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
Package GBU
I
F(AV)
6.0 A
V
RRM
200 V, 600 V, 800 V
I
FSM
150 A
I
R
5 μA
V
F
at I
F
= 3.0 V 1.05 V
T
J
max. 150 °C
Diode variations In-Line
Case Style GBU
- ~ ~ +
Case
Style GBU
+
~
~
-
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Maximum repetitive peak reverse voltage V
RRM
200 600 800 V
Maximum RMS reverse voltage V
RWM
140 420 560 V
Maximum DC blocking voltage V
DC
200 600 800 V
Maximum average forward rectified
output current at
T
C
= 100 °C
(1)
I
F(AV)
6.0
A
T
A
= 25 °C
(2)
2.8
Peak forward surge current single sine-wave
superimposed on rated load
I
FSM
150 A
Rating for fusing (t < 8.3 ms) I
2
t93A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Maximum instantaneous forward
voltage per diode
3.0 A V
F
1.05 V
Maximum DC reverse current at
rated DC blocking voltage per diode
T
J
= 25 °C
I
R
5.0
μA
T
J
= 125 °C 300
G5SBA20, G5SBA60, G5SBA80
www.vishay.com
Vishay General Semiconductor
Revision: 27-Sep-13
2
Document Number: 88608
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Typical thermal resistance
R
JA
(2)
22
°C/W
R
JC
(1)
3.4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
G5SBA60-E3/45 3.565 45 20 Tube
G5SBA60-E3/51 3.565 51 250 Paper tray
0
50
100
150
0
2.0
4.0
6.0
8.0
Average Forward Output Current (A)
Temperature (°C)
Heatsink Mounting, T
C
P.C.B. Mounting, T
A
1
10
100
0
50
100
150
T
J
= T
J
Max.
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
G5SBA20, G5SBA60, G5SBA80
www.vishay.com
Vishay General Semiconductor
Revision: 27-Sep-13
3
Document Number: 88608
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9)
R
.
0.080
(2.03)
0.060
(1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65)
0.210
(5.33)
0.190
(4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)

G5SBA20-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 6.0 Amp 200 Volt Glass Passivated
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union