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20100906b
MITB10WB1200TMH
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Advanced Technical Information
Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
17
12
A
A
P
tot
total power dissipation
T
C
= 25°C 70 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 10 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
1.9
2.3
2.2 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.3 A; V
GE
= V
CE
T
VJ
= 25°C 5 5.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.8
0.6 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 150 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 600 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 54 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 25°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100 W
55
30
320
200
0.9
0.75
ns
ns
ns
ns
mJ
mJ
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 100 W
60
35
360
340
1.55
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W; I
C
= 20 A;
T
VJ
= 125°C
V
CEK
< V
CES
-L
S
·d
I
/dt V
I
SC
(SCSOA)
short circuit safe operating area
V
CE
= 720 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 100 W; t
p
= 10 µs; non-repetitive
40 A
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.65
1.9 K/W
K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
15
10
A
A
V
F
forward voltage
I
F
= 10 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
2.5
2.0
3.1 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.2
0.1 mA
mA
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt = tbd A/µs T
VJ
= 125°C
I
F
= 10 A; V
GE
= 0 V
tbd
tbd
tbd
tbd
µC
A
ns
µJ
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.85
2.5 K/W
K/W
T
C
= 25°C unless otherwise stated
