4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-22
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB091802FC
Package H-37248-4
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ
= 1400 mA, P
OUT
= 55 W avg, ƒ
1
=920 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
18 19.5 — dB
Drain Efficiency
h
D
32 34 — %
Adjancent Channel Power Ratio ACPR — –35 –33 dBc
Features
• Broadband internal input and output matching
• Dual path design (2 X 90 W)
• Typical CW performance at 960 MHz, 28 V
- Ouput power @ P
1dB
= 206 W
- Efficiency = 56%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
25 30 35 40 45 50 55
Efficiency (%)
Peak/Average Ratio, Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
ptfb091802fc_g1
