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BGU8103X

P1-P3P4-P6P7-P9P10-P12
BGU8103 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 3 — 18 January 2017 4 of 12
NXP Semiconductors
BGU8103
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and COMPASS
8.2 Pin description
9. Limiting values
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 3.
[2] Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed V
CC
+ 0.6 V or 5.0 V.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
10. Recommended operating conditions
Table 4. Pin description
Symbol Pin Description
GND 1 ground
V
CC
2 supply voltage
RF_OUT 3 RF output
GND_RF 4 ground RF
RF_IN 5 RF input
ENABLE 6 enable
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
See
Section 18.3 “Disclaimers”, paragraph “Limiting values”.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled
[1]
0.5 +5.0 V
V
I(ENABLE)
input voltage on pin ENABLE V
I(ENABLE)
< V
CC
+ 0.6 V
[1][2]
0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC; V
I(RF_IN)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC; V
I(RF_OUT)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
P
i
input power
[1]
- 10 dBm
P
tot
total power dissipation T
sp
130 C - 55 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) according to
JEDEC standard JS-001-2010
- 2kV
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
- 2kV
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
T
amb
ambient temperature 40 +25 +85 C
V
I(ENABLE)
input voltage on pin ENABLE OFF state - - 0.3 V
ON state 0.8 - - V
BGU8103 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 3 — 18 January 2017 5 of 12
NXP Semiconductors
BGU8103
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and COMPASS
11. Thermal characteristics
12. Characteristics
[1] PCB losses are subtracted.
[2] Guaranteed by device design; not tested in production.
[3] Including PCB losses.
[4] f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
= 20 dBm at f
1
; P
i
= 65 dBm at f
2
.
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 225 K/W
Table 8. Characteristics at V
CC
= 1.8 V
f = 1575 MHz; V
CC
= 1.8 V; V
I(ENABLE)
0.8 V; P
i
< 40 dBm; T
amb
= 25 C; input matched to 50 using a 12 nH inductor;
see
Figure 3; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current V
I(ENABLE)
0.8 V
P
i
< 40 dBm 0.8 1.2 1.6 mA
P
i
= 20 dBm - 2.5 - mA
V
I(ENABLE)
0.3 V - - 1 A
G
p
power gain no jammer 14.5 17.5 20.0 dB
P
jam
= 20 dBm; f
jam
= 850 MHz - 18.5 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz - 18.0 - dB
RL
in
input return loss P
i
< 40 dBm - 8 - dB
P
i
= 20 dBm - 9 - dB
RL
out
output return loss P
i
< 40 dBm - 11 - dB
P
i
= 20 dBm - 11 - dB
ISL isolation -35- dB
NF noise figure P
i
= 40 dBm; no jammer
[1][2]
- 0.8 1.4 dB
P
i
= 40 dBm; no jammer
[2][3]
- 0.9 1.5 dB
P
jam
= 20 dBm; f
jam
= 850 MHz
[3]
- 1.1 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz
[3]
- 1.4 - dB
P
i(1dB)
input power at 1 dB
gain compression
[2]
19 16 - dBm
IP3
i
input third-order
intercept point
[2][4]
11 8 - dBm
IMD3 third-order intermodulation
distortion
output referred
[4]
- 72 - dBm
t
on
turn-on time time from V
I(ENABLE)
ON to 90 % of the gain - - 2 s
t
off
turn-off time time from V
I(ENABLE)
OFF to 10 % of the gain - - 1 s
BGU8103 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 3 — 18 January 2017 6 of 12
NXP Semiconductors
BGU8103
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and COMPASS
[1] PCB losses are subtracted.
[2] Guaranteed by device design; not tested in production.
[3] Including PCB losses.
[4] f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
= 20 dBm at f
1
; P
i
= 65 dBm at f
2
.
Table 9. Characteristics at V
CC
= 2.85 V
f = 1575 MHz; V
CC
= 2.85 V; V
I(ENABLE)
0.8 V; P
i
< 40 dBm; T
amb
= 25 C; input matched to 50 using a 12 nH inductor;
see
Figure 3; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current V
I(ENABLE)
0.8 V
P
i
< 40 dBm 0.8 1.2 1.6 mA
P
i
= 20 dBm - 2.5 - mA
V
I(ENABLE)
0.3 V - - 1 A
G
p
power gain no jammer 15.0 17.5 20.0 dB
P
jam
= 20 dBm; f
jam
= 850 MHz - 18.5 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz - 18.5 - dB
RL
in
input return loss P
i
< 40 dBm - 8 - dB
P
i
= 20 dBm - 9 - dB
RL
out
output return loss P
i
< 40 dBm - 11 - dB
P
i
= 20 dBm - 11 - dB
ISL isolation -35- dB
NF noise figure P
i
= 40 dBm; no jammer
[1][2]
- 1.0 1.4 dB
P
i
= 40 dBm; no jammer
[2][3]
- 1.1 1.5 dB
P
jam
= 20 dBm; f
jam
= 850 MHz
[3]
- 1.1 - dB
P
jam
= 20 dBm; f
jam
= 1850 MHz
[3]
- 1.4 - dB
P
i(1dB)
input power at 1 dB
gain compression
[2]
16 13 - dBm
IP3
i
input third-order
intercept point
[2][4]
10 7 - dBm
IMD3 third-order intermodulation
distortion
output referred
[4]
- 72 - dBm
t
on
turn-on time time from V
I(ENABLE)
ON to 90 % of the gain - - 2 s
t
off
turn-off time time from V
I(ENABLE)
OFF to 10 % of the gain - - 1 s
P1-P3P4-P6P7-P9P10-P12

BGU8103X

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Low-Noise Amplifier GPS1301M
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