BC337-40RL1G Datasheet BC337G, BC337-25RL1G, BC337-40RL1G | P1-P3

November, 2013 − Rev. 8

1 Publication Order Number:

BC337/D

BC337, BC337-25,

BC337-40

Amplifier Transistors

NPN Silicon

Features

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

45 Vdc

Collector − Base Voltage V

CBO

50 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

800 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

1

2

BASE

3

EMITTER

MARKING DIAGRAM

BC33

7−xx

AYWW G

G

BC337−xx = Device Code

(Refer to page 4)

A = Assembly Location

Y = Year

WW = Work Week

G =Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 17

BC337, BC337−25, BC337−40

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(I

C

= 10 mA, I

B

= 0)

V

(BR)CEO

45 − − Vdc

Collector− Emitter Breakdown Voltage

(I

C

= 100 mA, I

E

= 0)

V

(BR)CES

50 − − Vdc

Emitter− Base Breakdown Voltage

(I

E

= 10 mA, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 30 V, I

E

= 0)

I

CBO

− − 100 nAdc

Collector Cutoff Current

(V

CE

= 45 V, V

BE

= 0)

I

CES

− − 100 nAdc

Emitter Cutoff Current

(V

EB

= 4.0 V, I

C

= 0)

I

EBO

− − 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mA, V

CE

= 1.0 V) BC337

BC337−25

BC337−40

(I

C

= 300 mA, V

CE

= 1.0 V)

h

FE

100

160

250

60

−

630

400

630

−

Base−Emitter On Voltage

(I

C

= 300 mA, V

CE

= 1.0 V)

V

BE(on)

− − 1.2 Vdc

Collector− Emitter Saturation Voltage

(I

C

= 500 mA, I

B

= 50 mA)

V

CE(sat)

− − 0.7 Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(V

CB

= 10 V, I

E

= 0, f = 1.0 MHz)

C

ob

− 15 − pF

Current− Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 V, f = 100 MHz)

f

T

− 210 − MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

q

JC

(t) = (t) q

JC

q

JC

= 100°C/W MAX

q

JA

(t) = r(t) q

JA

q

JA

= 375°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

− T

C

= P

(pk)

q

JC

(t)

t

1

t

2

P

(pk)

DUTY CYCLE, D = t

1

/t

2

SINGLE PULSE

BC337, BC337−25, BC337−40

http://onsemi.com

3

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

1.0 ms1.0 s

T

J

= 135°C

T

A

= 25°C

T

C

= 25°C

dc

(APPLIES BELOW RATED V

CEO

)

1000

10

1001.0 3.0 10 30

V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 2. Active Region − Safe Operating Area

I

C

, COLLECTOR CURRENT (MA)

Figure 3. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

100

1000

10

10000.1 10 100

100

1.0

T

J

= 135°C

100 ms

V

CE

= 1 V

T

J

= 25°C

I

B

, BASE CURRENT (mA)

Figure 4. Saturation Region

I

C

, COLLECTOR CURRENT (mA)

Figure 5. “On” Voltages

100

10

1

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients

+1

I

C

, COLLECTOR CURRENT (mA)

Figure 7. Capacitances

0.1 11 10 100 1000

-2

-1

0

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS

)

V, VOLTAGE (VOLTS)

V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

C, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0

0.01 0.1 10 1001

1.0

0.8

0.6

0.4

0.2

0

1 10 1000100

10 100

T

J

= 25°C

I

C

= 10 mA

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 1 V

V

CE(sat)

@ I

C

/I

B

= 10

q

VC

for V

CE(sat)

q

VB

for V

BE

C

ob

C

ib

100 mA 300 mA 500 mA

BC337-40RL1G

BC337-40RL1G

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