NLU3G16BMX1TCG

© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 5
1 Publication Order Number:
NLU3G16/D
NLU3G16
Triple Non-Inverting Buffer
The NLU3G16 MiniGatet is an advanced high−speed CMOS
triple non−inverting buffer in ultra−small footprint.
The NLU3G16 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: t
PD
= 3.5 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
IN A2
OUT Y2
1
OUT Y2
IN A1
GND
OUT Y1
IN A2
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
V
CC
IN A1
OUT Y2
1
1
2
3
4
8
7
6
5
OUT Y3
IN A3
IN A3
OUT Y3
1
PIN ASSIGNMENT
1 IN A1
2 OUT Y3
3 IN A2
4 GND
5 OUT Y2
6 IN A3
7 OUT Y1
8 V
CC
MARKING
DIAGRAMS
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See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
UDFN8
1.8 x 1.2
CASE 517AJ
FUNCTION TABLE
L
H
AY
L
H
1
8
UY, R or LR = Specific Device Code
M = Date Code
G = Pb−Free Package
UYM
G
1
ULLGA8
1.95 x 1.0
CASE 613AC
LRM
G
AD M
1
UDFN8
1.6x1, 0.4P
CASE 517BY
D M
1
UDFN8
1.45x1, 0.35P
CASE 517BZ
UDFN8
1.95x1, 0.5P
CASE 517CA
AA M
1
1
1
1
NLU3G16
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 2) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
NLU3G16
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Low−Level
Input Voltage
1.65 0.75 x
V
CC
0.75 x
V
CC
V
2.3 to
5.5
0.70 x
V
CC
0.70 x
V
CC
V
IL
Low−Level
Input Voltage
1.65 0.25 x
V
CC
0.25 x
V
CC
0.25 x
V
CC
V
2.3 to
5.5
0.30 x
V
CC
0.30 x
V
CC
0.30 x
V
CC
V
OH
High−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage
Current
0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent
Supply Current
V
IN
= V
CC
or
GND
5.5 1.0 10 40
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
Input A to Output Y
3.0 to
3.6
C
L
= 15 pF 4.5 7.1 8.5 10
ns
C
L
= 50 pF 6.4 10.6 12 14.5
4.5 to
5.5
C
L
= 15 pF 3.5 5.5 6.5 8.0
C
L
= 50 pF 4.5 7.5 8.5 10
C
IN
Input Capacitance 4.0 10 10 10 pF
C
PD
Power Dissipation
Capacitance
(Note 3)
5.0 8.0 pF
3. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC.

NLU3G16BMX1TCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers TRIPLE BUFFER
Lifecycle:
New from this manufacturer.
Delivery:
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