MMBT2369LT3G Datasheet MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G | P1-P3

October, 2016 − Rev. 10

1 Publication Order Number:

MMBT2369LT1/D

MMBT2369L, MMBT2369AL

Switching Transistors

NPN Silicon

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

15 Vdc

Collector−Emitter Voltage V

CES

40 Vdc

Collector−Base Voltage V

CBO

40 Vdc

Emitter−Base Voltage V

EBO

4.5 Vdc

Collector Current − Continuous I

200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) T

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

†

ORDERING INFORMATION

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

www.onsemi.com

xxx = M1J or 1JA

M = Date Code*

G = Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MMBT2369ALT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

MMBT2369LT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−23

CASE 318

STYLE 6

xxx M G

SMMBT2369LT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SMMBT2369ALT1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

MMBT2369L, MMBT2369AL

www.onsemi.com

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

= 10 mAdc, I

= 0)

(BR)CEO

15 − −

Vdc

Collector−Emitter Breakdown Voltage

= 10 mAdc, V

= 0)

(BR)CES

40 − −

Vdc

Collector−Base Breakdown Voltage

= 10 mAdc, I

= 0)

(BR)CBO

40 − −

Vdc

Emitter−Base Breakdown Voltage

= 10 mAdc, I

= 0)

(BR)EBO

4.5 − −

Vdc

Collector Cutoff Current

= 20 Vdc, I

= 0)

= 20 Vdc, I

= 0, T

= 150°C)

CBO

−

0.4

mAdc

Collector Cutoff Current

MMBT2369A (V

= 20 Vdc, V

= 0)

CES

− − 0.4

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

MMBT2369 (I

= 10 mAdc, V

= 1.0 Vdc)

MMBT2369A (I

= 10 mAdc, V

= 1.0 Vdc)

MMBT2369A (I

= 10 mAdc, V

= 0.35 Vdc)

MMBT2369A (I

= 10 mAdc, V

= 0.35 Vdc, T

= −55°C)

MMBT2369A (I

= 30 mAdc, V

= 0.4 Vdc)

MMBT2369 (I

= 100 mAdc, V

= 2.0 Vdc)

MMBT2369A (I

= 100 mAdc, V

= 1.0 Vdc)

−

120

−

Collector−Emitter Saturation Voltage (Note 3)

MMBT2369 (I

= 10 mAdc, I

= 1.0 mAdc)

MMBT2369A (I

= 10 mAdc, I

= 1.0 mAdc)

MMBT2369A (I

= 10 mAdc, I

= 1.0 mAdc, T

= +125°C)

MMBT2369A (I

= 30 mAdc, I

= 3.0 mAdc)

MMBT2369A (I

= 100 mAdc, I

= 10 mAdc)

CE(sat)

−

0.25

0.20

0.30

0.25

0.50

Vdc

Base−Emitter Saturation Voltage (Note 3)

MMBT2369/A (I

= 10 mAdc, I

= 1.0 mAdc)

MMBT2369A (I

= 10 mAdc, I

= 1.0 mAdc, T

= −55°C)

MMBT2369A (I

= 30 mAdc, I

= 3.0 mAdc)

MMBT2369A (I

= 100 mAdc, I

= 10 mAdc)

BE(sat)

0.7

−

0.85

1.02

1.15

1.60

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

= 5.0 Vdc, I

= 0, f = 1.0 MHz)

obo

− − 4.0

Small Signal CurrentGain

= 10 mAdc, V

= 10 Vdc, f = 100 MHz)

5.0 − −

−

SWITCHING CHARACTERISTICS

Storage Time

= I

= 10 mAdc)

− 5.0 13

Turn−On Time

= 3.0 Vdc, I

= 10 mAdc, I

= 3.0 mAdc)

− 8.0 12

Turn−Off Time

= 3.0 Vdc, I

= 10 mAdc, I

= 3.0 mAdc, I

= 1.5 mAdc)

off

− 10 18

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBT2369L, MMBT2369AL

www.onsemi.com

Figure 1. t

Circuit − 10 mA

Figure 2. t

Circuit − 100 mA

Figure 3. t

off

Circuit − 10 mA

Figure 4. t

off

Circuit − 100 mA

Figure 5. Turn−On and Turn−Off Time Test Circuit

+10.6 V

-1.5 V

< 1 ns

PULSE WIDTH (t

) = 300 ns

DUTY CYCLE = 2%

3 V

270 W

3.3 k

* < 4 pF

10 V

95 W

1 k C

* < 12 pF

+10.8 V

-2 V

< 1 ns

PULSE WIDTH (t

) = 300 ns

DUTY CYCLE = 2%

+10.75 V

-9.15 V

< 1 ns

PULSE WIDTH (t

) = 300 ns

DUTY CYCLE = 2%

< 1 ns

-8.6 V

+11.4 V

PULSE WIDTH (t

) BETWEEN

10 AND 500 ms

DUTY CYCLE = 2%

270 W

3.3 k C

* < 4 pF

95 W

1 k C

* < 12 pF

10 V

1N916

out

90%

10%

3.3 kW

50 W

220 W

50 W

0.1 mF

out

3.3 k

0.0023 mF

0.005 mF 0.005 mF

0.1 mF 0.1 mF

= 3 V

90%

10%

off

out

= +12 V

= -15 V

TO OSCILLOSCOPE

INPUT IMPEDANCE = 50 W

RISE TIME = 1 ns

TURN-OFF WAVEFORMS

PULSE GENERATOR

V

RISE TIME < 1 ns

SOURCE IMPEDANCE = 50 W

PW ≥ 300 ns

DUTY CYCLE < 2%

TURN-ON WAVEFORMS

*Total shunt capacitance of test jig and connectors.

P1-P3 P4-P6

MMBT2369LT3G

Mfr. #:

Buy MMBT2369LT3G

Manufacturer:

ON Semiconductor

Description:

Bipolar Transistors - BJT SS GP XSTR NPN 15V

Lifecycle:

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MMBT2369LT3G

MMBT2369LT3G

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