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PSMN030-150P,127

P1-P3P4-P6P7-P9P10-P12P13-P14
PSMN030-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 December 2010 6 of 13
NXP Semiconductors
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 133 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 150 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --6V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C 234V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C 1 - - V
I
DSS
drain leakage current V
DS
=150V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=150V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=10V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-10V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C - - 81 mΩ
V
GS
=10V; I
D
=25A; T
j
= 25 °C - 24 30 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=55.5A; V
DS
=120V;
V
GS
=10V; T
j
=25°C
-98-nC
Q
GS
gate-source charge - 16 - nC
Q
GD
gate-drain charge - 38 50 nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C
- 3680 - pF
C
oss
output capacitance - 470 - pF
C
rss
reverse transfer capacitance - 220 - pF
t
d(on)
turn-on delay time V
DS
=75V; R
L
=1.5Ω; V
GS
=10V;
R
G(ext)
=5.6Ω; T
j
=25°C
-18-ns
t
r
rise time - 71 - ns
t
d(off)
turn-off delay time - 97 - ns
t
f
fall time - 76 - ns
L
D
internal drain inductance measured from tab to centre of die ;
T
j
=25°C
-3.5-nH
measured from drain lead to centre of
die (SOT78 package only) ;
T
j
=25°C
-4.5-nH
L
S
internal source inductance measured from source lead to source
bond pad ; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
= 25 °C - 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=0V; V
DS
=30V; T
j
=25°C
- 109 - ns
Q
r
recovered charge - 610 - nC
PSMN030-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 December 2010 7 of 13
NXP Semiconductors
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
V
DS
> I
D
x R
DSon
V
DS
> I
D
x R
DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Forward transconductance as a function of
drain current; typical values
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
40
50
20
30
10
60
70
I
D
(A)
0
V
DS
(V)
0 2.01.60.8 1.20.4
003aaf054
V
GS
= 10 V
8 V
5 V
5.2 V
5.4 V
6 V
4.4 V
4.8 V
4.6 V
0.04
0.02
0.06
0.08
R
DS(on)
(Ω)
0
I
D
(A)
0504020 3010
003aaf055
V
GS
= 10 V
6 V
8 V
4.4 V
4.6 V
5 V
5.4 V
4.8 V
5.2 V
20
30
10
40
50
I
D
(A)
0
V
GS
(V)
0108462
003aaf056
T
j
= 25 °C
T
j
= 175 °C
20
30
10
40
50
g
fs
(S)
0
I
D
(A)
0504020 3010
003aaf057
T
j
= 25 °C
T
j
= 175 °C
1.3
2.1
2.9
a
0.5
003aaf058
T
j
(°C)
−60 18010020
0.5
3.5
2.5
1.5
4.5
V
GS(th)
(V)
003aaf059
T
j
(°C)
−60 18010020
maximum
typical
minimum
PSMN030-150P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 December 2010 8 of 13
NXP Semiconductors
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
T
j
= 25 °C; V
DS
= V
GS
V
GS
= 0 V; f = 1 MHz
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
T
j
= 25 °C; I
D
= 55.5 A V
GS
= 0 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
003aaf060
V
GS
(V)
054231
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
maximum
typical
minimum
003aaf061
V
DS
(V)
10
−1
10
2
101
10
3
10
4
C
(pF)
10
2
C
iss
C
oss
C
rss
0
12
8
4
16
V
GS
(V)
003aaf062
Q
G
(nC)
0 14010060 120804020
V
DD
= 120 VV
DD
= 30 V
20
30
10
40
50
I
F
(A)
0
003aaf063
V
SDS
(V)
0 1.20.80.4
T
j
= 25 °CT
j
= 175 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

PSMN030-150P,127

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Nexperia
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MOSFET RAIL PWR-MOS
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