SRDA05-4.TBT

4© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SRDA05-4 and SRDA12-4
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve
0.01
0.1
1
10
0.1 1 10 100 1000
Pulse Duration - t
p
(µs)
Peak Pulse Power - P
pk
(kW)
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ambient Temperature - T
A
(
o
C)
% of Rated Power or I
PP
Clamping Voltage vs. Peak Pulse Current
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
Time (µs)
Percent of I
PP
e
-t
td = I
PP
/2
Waveform
Parameters:
tr = 8µs
td = 2s
Pulse Waveform
0
2
4
6
8
10
12
14
16
18
20
22
0 5 10 15 20 25 30
Peak Pulse Current - I
PP
(A)
Clamping Voltage - V
C
(V)
SRDA05-4
SRDA3.3-4
Waveform
Parameters:
tr = 8µs
td = 20µs
SRDA12-4
Variation of Capacitance vs. Reverse Voltage Forward Voltage vs. Forward Current
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Forward Current - I
F
(A)
Forward Voltage - V
F
(V)
Waveform
Parameters:
tr = 8
μ
s
td = 20
μ
s
0.88
0.9
0.92
0.94
0.96
0.98
1
1.02
1.04
00.511.522.533.5
Reverse Voltage - VR (V)
Cj (VR) / Cj (VR=0)
5© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SRDA05-4 and SRDA12-4
Device Connection Options for Protection of Four
High-Speed Lines
The SRDA TVS is designed to protect four data lines
from transient overvoltages by clamping them to a
fixed reference. When the voltage on the protected
line exceeds the reference voltage (plus diode V
F
) the
steering diodes are forward biased, conducting the
transient current away from the sensitive circuitry.
Data lines are connected at pins 1, 4, 6 and 7. The
negative reference is connected at pins 5 and 8.
These pins should be connected directly to a ground
plane on the board for best results. The path length is
kept as short as possible to minimize parasitic induc-
tance.
The positive reference is connected at pins 2 and 3.
The options for connecting the positive reference are
as follows:
1. To protect data lines and the power line, connect
pins 2 & 3 directly to the positive supply rail (V
CC
).
In this configuration the data lines are referenced
to the supply voltage. The internal TVS diode
prevents over-voltage on the supply rail.
2. The SRDA can be isolated from the power supply by
adding a series resistor between pins 2 and 3 and
V
CC
. A value of 10kΩ is recommended. The
internal TVS and steering diodes remain biased,
providing the advantage of lower capacitance.
3. In applications where no positive supply reference
is available, or complete supply isolation is desired,
the internal TVS may be used as the reference. In
this case, pins 2 and 3 are not connected. The
steering diodes will begin to conduct when the
voltage on the protected line exceeds the working
voltage of the TVS (plus one diode drop).
Data Line and Power Supply Protection Using Vcc as
reference
Data Line Protection with Bias and Power Supply
Isolation Resistor
Data Line Protection Using Internal TVS Diode as
Reference
ESD Protection With RailClamps
RailClamps are optimized for ESD protection using the
rail-to-rail topology. Along with good board layout,
these devices virtually eliminate the disadvantages of
using discrete components to implement this topology.
Consider the situation shown in Figure 1 where dis-
crete diodes or diode arrays are configured for rail-to-
rail protection on a high speed line. During positive
duration ESD events, the top diode will be forward
biased when the voltage on the protected line exceeds
the reference voltage plus the V
F
drop of the diode.
For negative events, the bottom diode will be biased
Applications Information
6© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
PROTECTION PRODUCTS
SRDA05-4 and SRDA12-4
PIN Descriptions
Figure 1 - “Rail-To-Rail” Protection Topology
(First Approximation)
Figure 2 - The Effects of Parasitic Inductance When
Using Discrete Components to Implement Rail-To-Rail
Protection
Figure 3 - Rail-To-Rail Protection Using
RailClamp TVS Arrays
Applications Information (continued)
when the voltage exceeds the V
F
of the diode. At first
approximation, the clamping voltage due to the charac-
teristics of the protection diodes is given by:
V
C
= V
CC
+ V
F
(for positive duration pulses)
V
C
= -V
F
(for negative duration pulses)
However, for fast rise time transient events, the
effects of parasitic inductance must also be consid-
ered as shown in Figure 2. Therefore, the actual
clamping voltage seen by the protected circuit will be:
V
C
= V
CC
+ V
F
+ L
P
di
ESD
/dt (for positive duration pulses)
V
C
= -V
F
- L
G
di
ESD
/dt (for negative duration pulses)
ESD current reaches a peak amplitude of 30A in 1ns
for a level 4 ESD contact discharge per IEC 61000-4-2.
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L
P
di
ESD
/dt = 1X10
-9
(30 / 1X10
-9
) = 30V
Example:
Consider a V
CC
= 5V, a typical V
F
of 30V (at 30A) for the
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V
C
= 5V + 30V + (10nH X 30V/nH) = 335V
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
the high V
F
of the discrete diode. It is not uncommon
for the V
F
of discrete diodes to exceed the damage
threshold of the protected IC. This is due to the
relatively small junction area of typical discrete compo-
nents. It is also possible that the power dissipation
capability of the discrete diode will be exceeded, thus
destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
helps to mitigate the effects of parasitic inductance in

SRDA05-4.TBT

Mfr. #:
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors TVS ARRAY 8-PIN SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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