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74VHCT573AFT

P1-P3P4-P6P7-P9
74VHCT573AFT
4
10.
10.
10.
10. Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Note
(Note 1)
(Note 2)
(Note 3)
(Note 4)
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±75
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in off-state
Note 2: High or low state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
Note 4: 180 mW in the range of T
a
= -40 to 85 . From T
a
= 85 to 125 a derating factor of -3.25 mW/ shall be
applied until 50 mW.
11.
11.
11.
11. Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Note
(Note1)
(Note2)
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 20
Unit
V
V
V
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs and bus inputs must be tied to either V
CC
or GND.
Note1: V
CC
= 0 V
Note2: High or low state
2016-08-04
Rev.3.0
©2016 Toshiba Corporation
74VHCT573AFT
5
12.
12.
12.
12. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
12.1.
12.1.
12.1.
12.1. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50 µA
I
OH
= -8mA
I
OL
= 50 µA
I
OL
= 8mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.94
Typ.
4.50
0.0
Max
0.8
0.1
0.36
±0.25
±0.1
4.0
1.35
0.5
Unit
V
V
V
V
µA
µA
µA
mA
µA
12.2.
12.2.
12.2.
12.2. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
a
a
a
a
= -40 to 85
= -40 to 85
= -40 to 85
= -40 to 85
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50 µA
I
OH
= -8 mA
I
OL
= 50 µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.80
Max
0.8
0.1
0.44
±2.50
±1.0
40.0
1.50
5.0
Unit
V
V
V
V
µA
µA
µA
mA
µA
12.3.
12.3.
12.3.
12.3. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
a
a
a
a
= -40 to 125
= -40 to 125
= -40 to 125
= -40 to 125
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Output leakage current
(Power-OFF)
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50 µA
I
OH
= -8 mA
I
OL
= 50 µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.70
Max
0.8
0.1
0.55
±10.0
±2.0
80.0
1.50
20.0
Unit
V
V
V
V
µA
µA
µA
mA
µA
2016-08-04
Rev.3.0
©2016 Toshiba Corporation
74VHCT573AFT
6
12.4.
12.4.
12.4.
12.4. Timing Requirements (Unless otherwise specified, T
Timing Requirements (Unless otherwise specified, T
Timing Requirements (Unless otherwise specified, T
Timing Requirements (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
, Input: t
, Input: t
, Input: t
, Input: t
r
r
r
r
= t
= t
= t
= t
f
f
f
f
= 3 ns)
= 3 ns)
= 3 ns)
= 3 ns)
Characteristics
Minimum pulse width (LE)
Minimum setup time
Minimum hold time
Symbol
t
w(H)
t
S
t
h
V
CC
(V)
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
Typ.
Limit
6.5
1.5
3.5
Unit
ns
ns
ns
12.5.
12.5.
12.5.
12.5. Timing Requirements
Timing Requirements
Timing Requirements
Timing Requirements
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
a
a
a
a
= -40 to 85
= -40 to 85
= -40 to 85
= -40 to 85
, Input: t
, Input: t
, Input: t
, Input: t
r
r
r
r
= t
= t
= t
= t
f
f
f
f
= 3 ns)
= 3 ns)
= 3 ns)
= 3 ns)
Characteristics
Minimum pulse width (LE)
Minimum setup time
Minimum hold time
Symbol
t
w(H)
t
S
t
h
V
CC
(V)
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
Limit
8.5
1.5
3.5
Unit
ns
ns
ns
12.6.
12.6.
12.6.
12.6. Timing Requirements
Timing Requirements
Timing Requirements
Timing Requirements
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
a
a
a
a
= -40 to 125
= -40 to 125
= -40 to 125
= -40 to 125
, Input: t
, Input: t
, Input: t
, Input: t
r
r
r
r
= t
= t
= t
= t
f
f
f
f
= 3 ns)
= 3 ns)
= 3 ns)
= 3 ns)
Characteristics
Minimum pulse width (LE)
Minimum setup time
Minimum hold time
Symbol
t
w(H)
t
S
t
h
V
CC
(V)
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
Limit
8.5
2.0
3.5
Unit
ns
ns
ns
12.7.
12.7.
12.7.
12.7. AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
, Input: t
, Input: t
, Input: t
, Input: t
r
r
r
r
= t
= t
= t
= t
f
f
f
f
= 3 ns)
= 3 ns)
= 3 ns)
= 3 ns)
Characteristics
Propagation delay time
(LE-Q)
Propagation delay time
(D-Q)
3-state output enable time
3-state output disable time
Output skew
Input capacitance
Output capacitance
Power dissipation capacitance
Symbol
t
PLH
,t
PHL
t
PLH
,t
PHL
t
PZL
,t
PZH
t
PLZ
,t
PHZ
t
osLH
,t
osHL
C
IN
C
OUT
C
PD
Note
(Note 1)
(Note 2)
Test Condition
R
L
= 1 kΩ
R
L
= 1 kΩ
V
CC
(V)
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
5.0 ± 0.5
C
L
(pF)
15
50
15
50
15
50
50
50
Min
Typ.
7.7
8.5
5.1
5.9
6.3
7.1
8.8
4
9
25
Max
12.3
13.3
8.5
9.5
10.9
11.9
11.2
1.0
10
Unit
ns
ns
ns
ns
ns
pF
pF
Note 1: Parameter guaranteed by design. (t
osLH
= |t
PLH
m-t
PLH
n|, t
osHL
= |t
PHL
m-t
PHL
n|)
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
× V
CC
× f
IN
+ I
CC
/8 (per latch)
And the total C
PD
when n pcs of latch operate can be gained by the following equation.
C
PD
(total) = 14 + 11 × n
2016-08-04
Rev.3.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

74VHCT573AFT

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IC LATCH OCTAL D-TYPE 20-TSSOP
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