2SD2670TL

2SD2670
Transistors
Rev.C 1/2
Low frequency amplifier
2SD2670
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat)
: max.250mV
At lc=1.5A / l
B
=30mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
TSMT3
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(
2
)
(
1
)
(
3
)
2.9
2.8
1.9
1.6
0.950.95
0.4
zAbsolute maximum ratings (Ta=25°C)
Parameter
Single pulse, Pw=1ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
3
500
150
55 to +150
6
1
Unit
V
V
V
A
A
mW
1W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power siddipation
Junction temperature
Range of storage temperature
2
1
Mounted on a 25
×
25
×
0.8mm Ceramic substrate
2
t
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
V
CB
=10V, I
E
=0A, f=1MHz
Transition frequency
f
T
360
MHz
V
CE
=2V, I
E
=−500mA, f=100MHz
BV
CBO
15
−−
V
I
C
=10µA
Collector-emitter breakdown voltage
BV
CEO
12
−−
V
I
C
=1mA
Collector-base breakdown voltage
BV
EBO
6
−−
V
I
E
=10µA
Emitter-base breakdown voltage
I
CBO
−−
100
nA V
CB
=15V
Collector cutoff current
I
EBO
−−
100
nA V
EB
=6V
Emitter cutoff current
V
CE(sat)
120
250 mV
I
C
=1.5A, I
B
=30mA
Collector-emitter saturation voltage
h
FE
270 680
V
CE
=2V, I
C
=500mA
DC current gain
Cob 30
pF
Collector output capacitance
Pulse
2SD2670
Transistors
Rev.C 2/2
zPackaging specifications
package
Code
Taping
Basic ordering unit (pieces)
2SD2670
TL
3000
Type
zElectrical characteristic curves
10
100
1000
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.1 DC current gain
vs. collector current
VCE=2V
Pulsed
Ta=100 C
Ta=25 C
Ta=40 C
0.01
0.1
1
10
0.001 0.01 0.1 1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.2 Collector-emitter saturation voltage
vs. collector current
IC/IB=20/1
V
CE
=2V
Pulsed
Ta=25 C
Ta =45 C
Ta=100 C
0.1
1
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
Fig.3 Base-emitter saturation voltage
vs.collector current
Ta=25 C
Pulsed
I
C
/I
B
=20/1
I
C
/I
B
=50/1
I
C
/I
B
=10/1
0.1
1
10
0.001
0.01
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT :I
C
(A)
0.1 1 10
Fig.4 Grounded emitter propagation
characteristics
IC/IB=20/1
Pulsed
Ta=100 C
Ta=25 C
Ta =45 C
10
100
1000
0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C
VCE=2V
f= 100MHz
Fig.5 Gain bandwidth product
vs. emitter current
10
100
1000
0.001 0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V
CB(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
IC=0A
f=1MHz
Ta=
25 C
Cib
Cob
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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2SD2670TL

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 12V 3A
Lifecycle:
New from this manufacturer.
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