IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
thJC
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Q
g
- nanocoulombs
0 255075100125
V
GE
- Volts
0
4
8
12
16
R
G
- Ohms
0 102030405060
E
(OFF)
- millijoules
0
2
4
6
8
E
(ON)
- millijoules
0
1
2
3
4
I
C
- Amperes
0 20406080
E
(OFF)
- milliJoules
0
1
2
3
4
(ON)
-
m
ou
es
0.00
0.25
0.50
0.75
1.00
V
CE
= 300V
I
C
= 16A
I
C
= 32A
E
(ON)
E
(OFF)
E
(OFF)
T
J
= 125°C
R
G
= 4.7Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10Ω
T
J
= 125°C
64
E
(ON)
I
C
= 64A
E
(OFF)
T
J
= 125°C
E
(ON)
I
C
= 32A
E
(ON)
E
(OFF)
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
. Fig. 8. Dependence of E
ON
and E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
IXGH 32N60CD1
IXGT 32N60CD1
