2004 Aug 02 4
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PDTA124E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −50 V
V
EBO
emitter-base voltage open collector − −10 V
V
I
input voltage
positive − +10 V
negative − −40 V
I
O
output current (DC) − −100 mA
I
CM
peak collector current − −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT54 note 1 − 500 mW
SOT23 note 1 − 250 mW
SOT346 note 1 − 250 mW
SOT323 note 1 − 200 mW
SOT416 note 1 − 150 mW
SOT490 notes 1 and 2 − 250 mW
SOT883 notes 2 and 3 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
