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OP224

P1-P3P4-P4
Hermetic Infrared Emitting
Diode
OP123, OP124, OP223, OP224
© TT electronics plc
Issue B 07/2016 Page 1
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Description:
Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared eming diode (GaAs),
mounted in a miniature hermecally sealed “pill” package with an enhanced temperature range and a high power output.
These devices are designed for direct mounng to PCBoards.
Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared eming diode (GaAIAs), mounted in a
hermecally sealed “pill” package with an enhanced temperature range and a narrow irradiance paern that provides high
on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at
equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size
permits high device density mounng.
All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices.
Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data, and to
ApplicaƟon BulleƟn 202 for pill-type soldering to PCBoard.
Applications:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor
Features:
• Hermetically sealed package
• Mechanically and spectrally matched to other OPTEK devices
• Designed for direct mount to PCBoard
Ordering InformaƟon
Part
Number
LED Peak
Wavelength
Total Beam
Angle
OP123
935 mm
24°
OP124
OP223
890 mm
OP224
1
2
Pin # LED
1
Anode
2
Cathode
Sensor
Collector
Emitter
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
RoHS
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Hermetic Infrared Emitting
Diode
OP123, OP124, OP223, OP224
Issue B 07/2016 Page 2
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Absolute Maximum Ratings (T
A
= 25° C unless otherwise noted)
Storage Temperature Range -65
o
C to +150
o
C
Operating Temperature Range -65
o
C to +125
o
C
Reverse Voltage
2.0 V
Continuous Forward Current 100 mA
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C
(1)(2)
Power Dissipation 150 mW
(3)
Peak Forward Current (2μs pulse with 0.1% duty cycle) 1.0 A
Electrical Specifications
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
E
E (APT)
(3)
Apertured Radiant Incidence
OP123
OP124
OP223
OP224
0.40
1.00
1.00
3.50
-
-
-
-
-
-
-
-
mW/cm
2
I
F
= 50 mA
(4)
V
F
Forward Voltage
OP123
OP124
-
-
-
-
1.50
1.80
V
I
F
= 50 mA
I
R
Reverse Current - - 100 μA V
R
= 2.0 V
λ
P
Wavelength at Peak Emission
OP123, OP124
OP223, OP224
-
-
935
890
-
-
nm
I
F
= 50 mA
I
F
= 10 mA
B
Spectral Bandwidth between Half Power Points
OP123, OP124
OP223, OP224
-
-
50
80
-
-
nm
I
F
= 50 mA
I
F
= 10 mA
Δλ
P
/ΔT
Spectral Shift with Temperature
OP123, OP124
OP223, OP224
-
-
+0.30
+0.18
-
-
nm/°C
I
F
= Constant
θ
HP
Emission Angle at Half Power Points - 24 - Degree I
F
= 50 mA
t
r
Output Rise Time
OP123, OP124
OP223, OP224
-
-
1000
500
-
-
ns
I
F(PK)
=100 mA, PW=10 μs, and
D.C.=10.0%
t
f
Output Fall Time
OP123, OP124
OP223, OP224
-
-
500
250
-
-
ns
I
F(PK)
=100 mA, PW=10 μs, and
D.C.=10.0%
Input Diode
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP123, OP124, OP223 and OP224, E
E(APT)
is a measurement using a 0.031” (0.787 mm) diameter apertured sensor placed 0.50” (12.7 mm)
from the measuring surface. E
E(APT)
is not necessarily uniform within the measured area.
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Hermetic Infrared Emitting
Diode
OP123, OP124, OP223, OP224
Issue B 07/2016 Page 3
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Performance
OP123, OP124
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
7
8
9
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
Normalized at 0.6" and 50 mA
Forward Current
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 5 10 15 20 25 30 35 40 45
Forward Current (mA)
Typical Forward Voltage (V)
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Optical Power vs I
F
vs Temp
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 5 10 15 20 25 30 35 40 45 50
Forward Current I
F
(mA)
Normalized Optical Power
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Normalized at 20 mA and 20
o
C
Normalized Intensity vs Beam Angle
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-45 -35 -25 -15 -5 5 15 25 35 45
Normalized Intensity
Angular Displacement (° Degrees)
P1-P3P4-P4

OP224

Mfr. #:
Buy OP224
Manufacturer:
Description:
Infrared Emitters Hermetic 890nm
Lifecycle:
New from this manufacturer.
Delivery:
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