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SD103BWS-HG3-18

P1-P3P4-P4
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Sep-16
1
Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
SD103AWS-G
SD103AWS-G3-08 or SD103AWS-G3-18
Single diode Z6
Tape and reel
SD103AWS-HG3-08 or SD103AWS-HG3-18
SD103BWS-G
SD103BWS-G3-08 or SD103BWS-G3-18
Single diode Z7
SD103BWS-HG3-08 or SD103BWS-HG3-18
SD103CWS-G
SD103CWS-G3-08 or SD103CWS-G3-18
Single diode Z8
SD101CWS-HG3-08 or SD101CWS-HG3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
SD103AWS-G V
RRM
40 V
SD103BWS-G V
RRM
30 V
SD103CWS-G V
RRM
20 V
Forward continuous current
(1)
I
F
350 mA
Single cycle surge 10 μs square wave I
FSM
2A
Power dissipation
(1)
P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
500 K/W
Junction temperature T
j
125 °C
Operating temperature range T
op
-55 to +125 °C
Storage temperature range T
stg
-55 to +150 °C
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Sep-16
2
Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 2 - Typical High Current Forward Conduction Curve
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Leakage current
V
R
= 30 V SD103AWS-G I
R
5μA
V
R
= 20 V SD103BWS-G I
R
5μA
V
R
= 10 V SD103CWS-G I
R
5μA
Forward voltage drop
I
F
= 20 mA V
F
370 mV
I
F
= 200 mA V
F
600 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
50 pF
Reverse recovery time
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
t
rr
10 ns
18488
0.01
1000
100
0.1
1
10
0 0.4 0.6 0.8 1.00.2
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
18489
4
5
3
2
0
1
0.5 1.001.5
I - Forward Current (A)
F
V
F
- Forward Voltage (V)
duty cycle = 2 %
t
p
= 300 ms
0.01
0.1
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
I
R
- Reverse Current (µA)
R
20084
75 °C
50 °C
25 °C
100 °C
T
amb
= 125 °C
18491
10 20 30 40 050
C- Diode Capacitance (pF)
D
V
R
- Reverse Voltag e (V)
100
10
1
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 27-Sep-16
3
Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
T
amb
- Ambient Temperature (°C)
18492
100 2000
V
R
- Reverse Voltage (V)
30
10
40
20
0
50
= 400 mAI
F
100 mA
200 mA
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
P1-P3P4-P4

SD103BWS-HG3-18

Mfr. #:
Buy SD103BWS-HG3-18
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers SCHOTTKY DIODE SOD323-HG3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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