AT-64020 Datasheet AT-64020 | P1-P3

AT-64020

Up to 4 GHz Linear Power Silicon Bipolar Transistor

Data Sheet

Features

• High Output Power:

27.5 dBm Typical P1 dB at 2.0 GHz

26.5 dBm Typical P1 dB at 4.0 GHz

• High Gain at 1 dB Compression:

10.0 dB Typical G1 dB at 2.0 GHz

6.5 dB Typical G1 dB at 4.0 GHz

• 35% Total Eciency

• Emitter Ballast Resistors

• Hermetic, Metal/Beryllia Package

200 mil BeO Package

Description

The AT-64020 is a high performance NPN silicon bipolar

transistor housed in a hermetic BeO disk package for

good thermal characteristics. This device is designed for

use in medium power, wide band amplier and oscillator

applications operating over VHF, UHF and microwave

frequencies.

Excellent device uniformity, performance and reliability

are produced by the use of ion-implantation, self-

alignment techniques, and gold metallization in the

fabrication of these devices. The use of ion-implanted

ballast resistors ensures uniform current distribution

through the multiple emitter ngers.

2

AT-64020 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

[1]

V

EBO

Emitter-Base Voltage V 2

V

CBO

Collector-Base Voltage V 40

V

CEO

Collector-Emitter Voltage V 20

I

C

Collector Current mA 200

P

T

Power Dissipation

[2,3]

W 3

T

j

Junction Temperature °C 200

T

STG

Storage Temperature °C -65 to 200

Thermal Resistance

[2,4]

:

θ

jc

= 40°C/W

Notes:

1. Permanent damage may occur if any of

these limits are exceeded.

2. Tcase = 25°C.

3. Derate at 25 mW/°C for Tc > 80°C.

4. The small spot size of this technique results

in a higher, though more accurate determi

-

nation of θjc than do alternate methods.

See MEASUREMENTS section “Thermal Re

-

sistance” for more information.

Electrical Specications, T

A

= 25°C

Symbol Parameters and Test Conditions

[1]

Units Min. Typ. Max.

|S

21E

|

2

Insertion Power Gain; V

CE

= 16 V, I

C

= 110 mA f = 2.0 GHz dB 7.0

f = 4.0 GHz 2.0

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 26.5 27.5

V

CE

= 16 V, I

C

= 110 mA f= 4.0 GHz 26.5

G

1 dB

1 dB Compressed Gain; V

CE

= 16 V, I

C

= 110 mA f = 2.0 GHz dB 8.5 10.0

f = 4.0 GHz 6.5

η

T

Total Eciency at 1 dB Compression: f = 4.0 GHz % 35.0

V

CE

= 16 V, I

C

= 110 mA

h

FE

Forward Current Transfer Ratio; V

CE

= 8 V, I

C

= 110 mA — 20 50 200

I

CBO

Collector Cuto Current; V

CB

= 16 V µA 100

I

EBO

Emitter Cuto Current; V

EB

= 1 V µA 5.0

Note:

1. ηT = (RF Output Power)/(RF Input Power + VCEIC).

3

Typical Scattering Parameters, Common Emitter, Z

O

= 50 Ω, T

A

= 25°C, V

CE

= 16 V, I

C

= 110 mA

Freq. S

11

S

21

S

12

S

22

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .61 -116 30.0 31.51 130 -33.1 .022 57 .67 -48

0.5 .75 -173 18.4 8.27 86 -28.8 .036 41 .23 -88

1.0 .75 171 12.5 4.23 66 -27.4 .043 49 .20 -100

1.5 .74 159 9.2 2.90 50 -23.5 .067 48 .21 -110

2.0 .74 148 7.0 2.23 35 -21.6 .083 46 .25 -120

2.5 .73 141 5.2 1.82 26 -19.8 .103 47 .27 -127

3.0 .73 130 3.8 1.56 12 -17.5 .133 41 .32 -135

3.5 .74 119 2.7 1.37 -2 -16.1 .157 35 .35 -146

4.0 .73 107 1.8 1.23 -16 -14.7 .186 26 .38 -158

4.5 .72 93 0.9 1.11 -30 -13.3 .217 18 .41 -168

5.0 .71 79 0.1 1.01 -43 -11.8 .256 8 .42 179

A model for this device is available in the DEVICE MODELS section.

AT-64020 Typical Performance, T

A

= 25°C

FREQUENCY (GHz)

Figure 4. Insertion Power Gain, Maximum Available

Gain and Maximum Stable Gain vs. Frequency.

V

CE

= 16 V, I

C

= 110 mA.

GAIN (dB)

0.1 0.50.3 1.0 3.0 5.0

FREQUENCY (GHz)

Figure 1. Power Output @ 1 dB Gain Compression vs.

Frequency and Collector Current. V

CE

= 16 V.

30

29

28

27

26

25

P

1 dB

(dBm)

1.0 2.0 3.0 4.0

150 mA

70 mA

110 mA

35

30

25

20

15

10

5

0

MSG

MAG

|S

21E

|

2

POWER IN (dBm)

Figure 3. Output Power and Eciency vs. Input Power.

V

CE

= 16 V, I

C

= 110mA, f = 4.0 GHz.

POWER OUT (dBm)

30

25

20

15

10

5

0

40

30

20

10

0

EFFICIENCY (%)

0 105 15 20 25

P

OUT

η

T

FREQUENCY (GHz)

Figure 2. 1 dB Compressed Gain vs. Frequency and

Collector Current. V

CE

= 16 V.

15

12

9

6

3

G

1 dB

(dB)

1.0 2.0 3.0 4.0

150 mA

70 mA

110 mA

AT-64020

AT-64020

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