TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0094 Rev. 2 (101572) Page 2 of 5
APPLICATIONS / BENEFITS
¾ Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)
¾ Clamps transient in less than 100 pico seconds
¾ Protection from switching transients and induced RF
¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N5555 to 1N5558
Class 2 & 3: 1N5555 to 1N5557
Class 4: 1N5555 to 1N5556
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N5555 to 1N5557
Class 2: 1N5555 to 1N5557
¾ Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
¾ 1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (T
L
) 25
o
C (see Figs 1, 2, & 4)
¾ Operating & Storage Temperatures: -65
o
to +175
o
C
¾ THERMAL RESISTANCE: 50
o
C/W junction to lead at 0.375 inches (10 mm) from body or 110
o
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25 mm
¾ DC Power Dissipation*: 1 Watt at T
L
= +25
o
C 3/8” (10 mm) from body (see derating in Fig 3)
¾ Forward surge current: 200 Amps for 8.3ms half-sine wave at T
A
= +25
o
C
¾ Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
¾ CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass
¾ FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026
¾ POLARITY: Cathode connected to case and polarity indicated by diode symbol
¾ MARKING: Part number and polarity diode symbol
¾ WEIGHT: 1.4 grams. (Approx)
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
¾ See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated
standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
