MPSA06,116

DATA SHEET
Product specification
Supersedes data of 1999 Apr 27
2004 Oct 11
DISCRETE SEMICONDUCTORS
MPSA06
NPN general purpose transistor
b
ook, halfpage
M3D186
2004 Oct 11 2
Philips Semiconductors Product specification
NPN general purpose transistor MPSA06
FEATURES
Low current (max. 500 mA)
Low voltage (max. 80 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: MPSA56.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
MPSA06 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 80 V
V
CEO
collector-emitter voltage open base 80 V
V
EBO
emitter-base voltage open collector 5V
I
C
collector current (DC) 500 mA
I
CM
peak collector current 1A
I
BM
peak base current 200 mA
P
tot
total power dissipation T
amb
25 °C; note 1 625 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
ambient temperature 65 +150 °C
2004 Oct 11 3
Philips Semiconductors Product specification
NPN general purpose transistor MPSA06
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
=80V; I
E
=0 A 50 nA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
=0 A 50 nA
h
FE
DC current gain V
CE
=1V; I
C
=10mA 100
V
CE
=1V; I
C
= 100 mA 100
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
=10mA 250 mV
V
BE
base-emitter voltage V
CE
=1V; I
C
= 100 mA 1.2 V
f
T
transition frequency V
CE
=2V; I
C
= 10 mA; f = 100 MHz 100 MHz

MPSA06,116

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS NPN 80V 0.5A SOT54
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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