BC640ZL1G Datasheet BC640, BC638G, BC638ZL1 | P1-P3

September, 2005 − Rev. 2

1 Publication Order Number:

BC638/D

BC638, BC640, BC640−16

High Current Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BC638

BC640

V

CEO

−60

−80

Vdc

Collector-Base Voltage

BC638

BC640

V

CBO

−60

−80

Vdc

Emitter-Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

C

−0.5 Adc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance,

Junction−to−Case

R

q

JC

83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92

CASE 29

STYLE 14

3

2

1

COLLECTOR

2

3

BASE

1

EMITTER

MARKING DIAGRAMS

BC

6x

AYWW G

G

BC6x = Device Code

x = 3 or 4

BC640−16 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BC64

0−16

AYWW G

G

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

BC638, BC640, BC640−16

http://onsemi.com

2

ORDERING INFORMATION

Device Package Shipping

BC638 TO−92 5000 Units / Box

BC638G TO−92

(Pb−Free)

5000 Units / Box

BC638ZL1 TO−92 2000 Units / Ammo Box

BC638ZL1G TO−92

(Pb−Free)

2000 Units / Ammo Box

BC640 TO−92 5000 Units / Box

BC640G TO−92

(Pb−Free)

5000 Units / Box

BC640ZL1 TO−92 2000 Units / Ammo Box

BC640ZL1G TO−92

(Pb−Free)

2000 Units / Ammo Box

BC640−16 TO−92 5000 Units / Box

BC640−16G TO−92

(Pb−Free)

5000 Units / Box

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(I

C

= −10 mAdc, I

B

= 0) BC638

BC640

V

(BR)CEO

−60

−80

−

Vdc

Collector − Base Breakdown Voltage

(I

C

= −100 mAdc, I

E

= 0) BC638

BC640

V

(BR)CBO

−60

−80

−

Vdc

Emitter − Base Breakdown Voltage

(I

E

= −10 mAdc, I

C

= 0)

V

(BR)EBO

−5.0 − − Vdc

Collector Cutoff Current

(V

CB

= −30 Vdc, I

E

= 0)

(V

CB

= −30 Vdc, I

E

= 0, T

A

= 125°C)

I

CBO

−

−100

−10

nAdc

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= −5.0 mAdc, V

CE

= −2.0 Vdc)

(I

C

= −150 mAdc, V

CE

= −2.0 Vdc) BC638

BC640

BC640−16

(I

C

= −500 mA, V

CE

= −2.0 V)

h

FE

25

40

100

25

−

160

250

−

Collector − Emitter Saturation Voltage

(I

C

= −500 mAdc, I

B

= −50 mAdc)

V

CE(sat)

−

−0.25

−0.5

−

Vdc

Base − Emitter On Voltage

(I

C

= −500 mAdc, V

CE

= −2.0 Vdc)

V

BE(on)

− − −1.0 Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(I

C

= −50 mAdc, V

CE

= −2.0 Vdc, f = 100 MHz)

f

T

− 150 − MHz

Output Capacitance

(V

CB

= −10 Vdc, I

E

= 0, f = 1.0 MHz)

C

ob

− 9.0 − pF

Input Capacitance

(V

EB

= −0.5 Vdc, I

C

= 0, f = 1.0 MHz)

C

ib

− 110 − pF

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

BC638, BC640, BC640−16

http://onsemi.com

3

I

C

, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

V, VOLTAGE (VOLTS)

V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

−1000

−1

−2

−5

−10

−20

−50

−100

−200

−500

−100−1 −2 −3 −4 −5 −7 −10 −20 −30−40 −50 −70

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC636

BC638

BC640

P

D

T

A

25°C

P

D

T

C

25°C

SOA = 1S

P

D

T

C

25°C

P

D

T

A

25°C

500

200

100

50

20

−1 −3 −5 −10 −30 −50 −100 −300 −500 −1000

I

C

, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

V

CE

= −2 V

500

300

100

50

20

−1 −10 −100 −1000

I

C

, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

−1

−0.8

−0.6

−0.4

−0.2

0

−1 −10

I

C

, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= −2 V

V

CE(sat)

@ I

C

/I

B

= 10

−0.2

−1.0

−2.2

−1.6

I

C

, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

V

CE

= −2 VOLTS

DT = 0°C to +100°C

q

V

for V

BE

−A

−B

−L

V

CE

= −2 V

−100 −1000

−1 −3 −5 −10 −30 −50 −100 −300 −500 −1000

BC640ZL1G

BC640ZL1G

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