CY7C185-20PXC

CY7C185
Document #: 38-05043 Rev. *A Page 4 of 11
Switching Characteristics Over the Operating Range
[6]
7C185-15 7C185-20 7C185-25 7C185-35
Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle
t
RC
Read Cycle Time 15 20 25 35 ns
t
AA
Address to Data Valid 15 20 25 35 ns
t
OHA
Data Hold from Address Change 3 5 5 5 ns
t
ACE1
CE
1
LOW to Data Valid 15 20 25 35 ns
t
ACE2
CE
2
HIGH to Data Valid 15 20 25 35 ns
t
DOE
OE LOW to Data Valid 8 9 12 15 ns
t
LZOE
OE LOW to Low Z 3 3 3 3 ns
t
HZOE
OE HIGH to High Z
[7]
7 8 10 10 ns
t
LZCE1
CE
1
LOW to Low Z
[8]
3 5 5 5 ns
t
LZCE2
CE
2
HIGH to Low Z 3 3 3 3 ns
t
HZCE
CE
1
HIGH to High Z
[7, 8]
CE
2
LOW to High Z
7 8 10 10 ns
t
PU
CE
1
LOW to Power-Up
CE
2
to HIGH to Power-Up
0 0 0 0 ns
t
PD
CE
1
HIGH to Power-Down
CE
2
LOW to Power-Down
15 20 20 20 ns
Write Cycle
[9]
t
WC
Write Cycle Time 15 20 25 35 ns
t
SCE1
CE
1
LOW to Write End 12 15 20 20 ns
t
SCE2
CE
2
HIGH to Write End 12 15 20 20 ns
t
AW
Address Set-up to Write End 12 15 20 25 ns
t
HA
Address Hold from Write End 0 0 0 0 ns
t
SA
Address Set-up to Write Start 0 0 0 0 ns
t
PWE
WE Pulse Width 12 15 15 20 ns
t
SD
Data Set-up to Write End 8 10 10 12 ns
t
HD
Data Hold from Write End 0 0 0 0 ns
t
HZWE
WE LOW to High Z
[7]
7 7 7 8 ns
t
LZWE
WE HIGH to Low Z 3 5 5 5 ns
Notes:
6. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
7. t
HZOE,
t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady state voltage.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE1
and t
LZCE2
for any given device.
9. The internal write time of the memory is defined by the overlap of CE
1
LOW, CE
2
HIGH, and WE LOW. All 3 signals must be active to initiate a write and either
signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
CY7C185
Document #: 38-05043 Rev. *A Page 5 of 11
Switching Waveforms
10. Device is continuously selected. OE, CE
1
= V
IL
. CE
2
= V
IH
.
11. WE is HIGH for read cycle.
12. Data I/O is High Z if OE
= V
IH
, CE
1
= V
IH
, WE = V
IL
,
or CE
2
=V
IL
.
13. The internal write time of the memory is defined by the overlap of CE
1
LOW, CE
2
HIGH and WE LOW. CE
1
and WE must be LOW and CE
2
must be HIGH
to initiate write. A write can be terminated by CE
1
or WE going HIGH or CE
2
going LOW. The data input set-up and hold timing should be referenced to the
rising edge of the signal that terminates the write.
14. During this period, the I/Os are in the output state and input signals should not be applied.
ADDRESS
DATA OUT PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
Read Cycle No.1
[10,11]
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
t
HZOE
t
HZCE
t
PD
OE
HIGH
DATA OUT
V
CC
SUPPLY
CURRENT
CE
1
OE
CE
2
Read Cycle No.2
[12,13]
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
t
HZOE
DATA
IN
VALID
CE
CE
1
OE
WE
CE
2
DATA I/O
t
SCEI
t
SCE2
ADDRESS
NOTE 14
[11,13]
Write Cycle No. 1 (WE Controlled)
CY7C185
Document #: 38-05043 Rev. *A Page 6 of 11
Notes:
15. The minimum write cycle time for write cycle #3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
16. If CE
1
goes HIGH or CE
2
goes LOW simultaneously with WE HIGH, the output remains in a high-impedance state.
Switching Waveforms (continued)
t
WC
t
AW
t
SA
t
HA
t
HD
t
SD
t
SCE1
WE
DATA I/O
ADDRESS
CE
1
DATA
IN
VALID
t
SCE2
CE
2
rite Cycle No. 2 (CE Controlled)
[13,14,15]
t
HD
t
SD
t
LZWE
t
SA
t
HA
t
AW
t
WC
t
HZWE
DATA
IN
VALID
t
SCE1
t
SCE2
CE
1
CE
2
ADDRESS
DATA I/O
WE
Write Cycle No. 3 (WE Controlled, OE LOW)
[13,14,15,16]
NOTE 14

CY7C185-20PXC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 64Kb 20ns 8K x 8 SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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