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BUK7635-100A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7635-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
6 of 13
NXP Semiconductors
BUK7635-100A
N-channel T
renchMOS st
andard level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Forwar
d transconductanc
e as a function of
drain current; typi
cal values
03nd33
0
20
40
60
80
100
120
140
0246
8
1
0
V
DS
(V)
I
D
(A)
4.5
5.5
6.5
7.5
20
8
9
V
GS
(V) = 10
03nd32
20
25
30
35
51
0
1
5
2
0
V
GS
(V)
R
DSon
(m
Ω
)
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03nd30
0
5
10
15
20
25
30
35
02
0
4
0
6
0
I
D
(A)
g
fs
(S)
BUK7635-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
7 of 13
NXP Semiconductors
BUK7635-100A
N-channel T
renchMOS st
andard level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nd31
0
10
20
30
40
50
0246
8
V
GS
(V)
I
D
(A)
Tj = 175
°
C
Tj = 25
°
C
03nd29
0
2
4
6
8
10
02
0
4
0
6
0
Q
G
(nC)
VGS
(V)
V
DD
= 80V
V
DD
= 14V
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nd34
0
20
40
60
80
0
50
100
150
I
D
(A)
R
DSon
(m
Ω
)
10
7
6.5
6
5.5
V
GS
(V) = 8
BUK7635-100A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 February 201
1
8 of 13
NXP Semiconductors
BUK7635-100A
N-channel T
renchMOS st
andard level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junction
temperature
Fig
14.
Input, outp
ut and reverse trans
fer capacitances
as a function of d
rain-source voltage; ty
pical
values
Fig 15.
Reverse diode curren
t as a function of revers
e diode voltage; typical valu
es
03aa29
0
1
2
3
-
60
0
60
120
180
T
j
(
°
C)
a
03nd35
0
500
1000
1500
2000
2500
3000
3500
4000
4500
10
-2
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nd28
0
20
40
60
0
0.5
1.0
1.5
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7635-100A,118
Mfr. #:
Buy BUK7635-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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