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74AHC04PW-Q100J

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
74AHC_AHCT04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 2 April 2013 3 of 15
NXP Semiconductors 74AHC04-Q100; 74AHCT04-Q100
Hex inverter
5. Pinning information
5.1 Pinning
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level;
L = LOW voltage level.
(1) This is not a supply pin. The substrate is attached to this
pad using conductive die attach material. There is no
electrical or mechanical requirement to solder this pad.
However, if it is soldered, the solder land should remain
floating or be connected to GND.
Fig 4. Pin configuration SO14 and TSSOP14 Fig 5. Pin configuration DHVQFN14
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


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*1'
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7UDQVSDUHQWWRSYLHZ
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9
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Table 2. Pin description
Symbol Pin Description
1A, 2A, 3A, 4A, 5A, 6A 1, 3, 5, 9, 11, 13 data input
1Y, 2Y, 3Y, 4Y, 5Y, 6Y 2, 4, 6, 8, 10, 12 data output
GND 7 ground (0 V)
V
CC
14 supply voltage
Table 3. Function table
[1]
Input nA Output nY
LH
HL
74AHC_AHCT04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 2 April 2013 4 of 15
NXP Semiconductors 74AHC04-Q100; 74AHCT04-Q100
Hex inverter
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 packages: above 70 C the value of P
tot
derates linearly at 8 mW/K.
For TSSOP14 packages: above 60 C the value of P
tot
derates linearly at 5.5 mW/K.
For DHVQFN14 packages: above 60 C the value of P
tot
derates linearly at 4.5 mW/K.
8. Recommended operating conditions
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7.0 V
V
I
input voltage 0.5 +7.0 V
I
IK
input clamping current V
I
< 0.5 V
[1]
20 - mA
I
OK
output clamping current V
O
<0.5 V or V
O
> V
CC
+ 0.5 V
[1]
20 +20 mA
I
O
output current V
O
=0.5 V to (V
CC
+ 0.5 V) 25 +25 mA
I
CC
supply current - +75 mA
I
GND
ground current 75 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 Cto+125C
[2]
- 500 mW
Table 5. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
74AHC04-Q100
V
CC
supply voltage 2.0 5.0 5.5 V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 3.0 V to 3.6 V - - 100 ns/V
V
CC
= 4.5 V to 5.5 V - - 20 ns/V
74AHCT04-Q100
V
CC
supply voltage 4.5 5.0 5.5 V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 4.5 V to 5.5 V - - 20 ns/V
74AHC_AHCT04_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 2 April 2013 5 of 15
NXP Semiconductors 74AHC04-Q100; 74AHCT04-Q100
Hex inverter
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 Cto+85C 40 Cto+125C Unit
Min Typ Max Min Max Min Max
74AHC04-Q100
V
IH
HIGH-level
input voltage
V
CC
=2.0V 1.5 - - 1.5 - 1.5 - V
V
CC
=3.0V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - - 0.5 - 0.5 - 0.5 V
V
CC
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
V
OH
HIGH-level
output voltage
V
I
=V
IH
or V
IL
I
O
= 50 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 50 A; V
CC
= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= 50 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= 8.0 mA; V
CC
= 4.5 V 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
I
O
=50A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
=50A; V
CC
= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
=50A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
=4.0mA; V
CC
= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
=8.0mA; V
CC
= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
=0Vto5.5V
- - 0.1 - 1.0 - 2.0 A
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=5.5V
- - 2.0 - 20 - 40 A
C
I
input
capacitance
V
I
=V
CC
or GND - 3 10 - 10 - 10 pF
74AHCT04-Q100
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
=V
IH
or V
IL
; V
CC
=4.5V
I
O
= 50 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 8.0 mA 3.94 - - 3.80 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
; V
CC
=4.5V
I
O
=50A - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
=0Vto5.5V
- - 0.1 - 1.0 - 2.0 A
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

74AHC04PW-Q100J

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Buy 74AHC04PW-Q100J
Manufacturer:
Nexperia
Description:
Inverters Hex inverter
Lifecycle:
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